|
National Semiconductor |
December 1994
LM113 LM313 Reference Diode
General Description
The LM113 LM313 are temperature compensated low volt-
age reference diodes They feature extremely-tight regula-
tion over a wide range of operating currents in addition to an
unusually-low breakdown voltage and good temperature
stability
The diodes are synthesized using transistors and resistors
in a monolithic integrated circuit As such they have the
same low noise and long term stability as modern IC op
amps Further output voltage of the reference depends only
on highly-predictable properties of components in the IC so
they can be manufactured and supplied to tight tolerances
Features
Y Low breakdown voltage 1 220V
Y Dynamic impedance of 0 3X from 500 mA to 20 mA
Y Temperature stability typically 1% overb55 C to 125 C
range (LM113) 0 C to 70 C (LM313)
Y Tight tolerance g5% g2% or g1%
The characteristics of this reference recommend it for use in
bias-regulation circuitry in low-voltage power supplies or in
battery powered equipment The fact that the breakdown
voltage is equal to a physical property of silicon the ener-
gy-band gap voltage makes it useful for many tempera-
ture-compensation and temperature-measurement func-
tions
Schematic and Connection Diagrams
Metal Can Package
Typical Applications
Level Detector for Photodiode
Order Number
LM113H LM113H 883
LM113-1H LM113-1H 883
LM113-2H LM113-2H 883
or LM313H
See NS Package Number H02A
TL H 5713 – 1
Low Voltage Regulator
C1995 National Semiconductor Corporation TL H 5713
Solid tantalum
TL H 5713 – 2
RRD-B30M115 Printed in U S A
Absolute Maximum Ratings
If Military Aerospace specified devices are required
please contact the National Semiconductor Sales
Office Distributors for availability and specifications
(Note 3)
Power Dissipation (Note 1)
100 mW
Reverse Current
50 mA
Forward Current
50 mA
Storage Temperature Range
Lead Temperature
(Soldering 10 seconds)
Operating Temperature Range
LM113
LM313
b65 C to a150 C
300 C
b55 C toa125 C
0 C to a70 C
Electrical Characteristics (Note 2)
Parameter
Conditions
Min Typ Max Units
Reverse Breakdown Voltage
LM113 LM313
LM113-1
LM113-2
IR e 1 mA
1 160
1 210
1 195
1 220
1 22
1 22
1 280
1 232
1 245
V
V
V
Reverse Breakdown Voltage
Change
0 5 mA s IR s 20 mA
6 0 15 mV
Reverse Dynamic Impedance
IR e 1 mA
IR e 10 mA
02 10
0 25 0 8
X
X
Forward Voltage Drop
IF e 1 0 mA
0 67 1 0
V
RMS Noise Voltage
10 Hz s f s 10 kHz
IR e 1 mA
5 mV
Reverse Breakdown Voltage
Change with Current
0 5 mA s IR s 10 mA
TMIN s TA s TMAX
15 mV
Breakdown Voltage Temperature
Coefficient
1 0 mA s IR s 10 mA
TMIN s TA s TMAX
0 01
%C
Note 1 For operating at elevated temperatures the device must be derated based on a 150 C maximum junction and a thermal resistance of 80 C W junction to
case or 440 C W junction to ambient
Note 2 These specifications apply for TA e 25 C unless stated otherwise At high currents breakdown voltage should be measured with lead lengths less than
inch Kelvin contact sockets are also recommended The diode should not be operated with shunt capacitances between 200 pF and 0 1 mF unless isolated by at
least a 100X resistor as it may oscillate at some currents
Note 3 Refer to the following RETS drawings for military specifications RETS113-1X for LM113-1 RETS113-2X for LM113-2 or RETS113X for LM113
Typical Performance Characteristics
Temperature Drift
Reverse Dynamic Impedance
Reverse Characteristics
TL H 5713 – 3
2
|