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PDF NNCD5.6LG Data sheet ( Hoja de datos )
| Número de pieza | NNCD5.6LG | |
| Descripción | LOW CAPACITANCE TYPE ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES QUARTO TYPE: COMMON ANODE 5-PIN MINI MOLD | |
| Fabricantes | NEC | |
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DATA SHEET
ESD NOISE CLIPPING DIODES
NNCD5.6LG to NNCD6.8LG
LOW CAPACITANCE TYPE ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES
(QUARTO TYPE: COMMON ANODE)
5-PIN MINI MOLD
This product series is a low capacitance type diode developed
for ESD (Electrostatic Discharge) absorption. Based on the
IEC1000-4-2 test on electromagnetic interference (EMI), the
diode assures an endurance of no less than 8 kV, and capacitance
is small with 10 pF between the terminal. This product series is
the most suitable for the ESD absorption in the high-speed data
communication bus such as USB.
With four elements mounted in the 5Pin Mini Mold Package,
that product can cope with high density assembling.
PACKAGE DIMENSIONS
2.8 ± 0.2
1.5
(in millimeters)
0.65
+0.1
–0.15
15
2
FEATURES
• Based on the electrostatic discharge immunity test (IEC1000-
4-2), the product assures the minimum endurance of 8 kV.
• Capacitance is small with 10 pF (at VR = 0 V, f = 1 MHz)
between the terminal. It is excellent in the frequency
characteristic.
• With 4 elements mounted (common anode) in the 5-pin mini
mold package, that product can cope with high density
assembling.
34
(5-pin mini mold)
PIN CONNECTION
APPLICATIONS
• External interface circuit ESD absorption in the high-speed
data communication bus such as USB.
5
4
123
1: K1 Cathode 1
2: A Anode (Common)
3: K2 Cathode 2
4: K3 Cathode3
5: K4 Cathode4
MAXIMUM RATINGS (TA = 25°C)
Power Dissipation
Surge Reverse Power
Junction Temperature
Storage Temperature
P
PRSM
Tj
Tstg
200 mW
2W (t = 10 µs, 1 pulse)
150°C
–55°C to +150°C
(Total)
Fig.5
Document No. D12785EJ1V0DS00 (1st edition)
Date Published October 1998 N CP(K)
Printed in Japan
© 1998
1 page  
REFERENCE
Document
NEC semiconductor device reliability/quality control system
NEC semiconductor device reliability/quality control system
Quality grade on NEC semiconductor device
Semiconductor device mounting technology manual
NNCD5.6LG to NNCD6.8LG
Document No.
C11745E
MEI - 1201
C11531E
C10535E
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet NNCD5.6LG.PDF ] | |
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