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NEC |
DATA SHEET
E.S.D NOISE CLIPPING DIODES
NNCD3.3A to NNCD12A
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES
(400 mW TYPE)
This product series is a diode developed for E.S.D (Electrostatic
Discharge) noise protection. Based on the IEC1000-4-2 test on
electromagnetic interference (EMI), the diode assures an endur-
ance of no less than 30 kV.
Type NNCD2.0A to NNCD12A Series is into DO-34 Package
(Body length 2.4 mm MAX.) with DHD (Double Heatsink Diode)
construction having allowable power dissipation of 400 mW.
FEATURES
• Based on the electrostatic discharge immunity test (IEC1000-4-
2), the product assures the minimum endurance of 30 kV.
• Based on the reference supply of the set, the product achieves
a series over a wide range (15 product name lined up).
• DHD (Double Heatsink Diode) construction.
PACKAGE DIMENSIONS
(in millimeters)
φ 0.4
Cathode
indication
φ 2.0 MAX.
APPLICATIONS
• Circuit E.S.D protection.
• Circuits for Waveform clipper, Surge absorber.
MAXIMUM RATINGS (TA = 25 °C)
Power Dissipation
P
Surge Reverse Power
PRSM
Junction Temperature
Tj
Storage Temperature
Tstg
400 mW
100 W (tT = 10 µs 1 pulse)
175 °C
–65 °C to +175 °C
Fig. 7
Document No. D11769EJ2V0DS00 (2nd edition)
Date Published December 1996 N
Printed in Japan
© 1996
NNCD3.3A to NNCD12A
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
Type Number
Breakdown VoltageNote 1
VBR (V)
Dynamic
ImpedanceNote 2
Zz (Ω)
Reverse Leakage
IR (µA)
MIN. MAX. IT (mA) MAX. IT (mA) MAX. VR (V)
NNCD3.3A
3.16 3.53
5
120
5
20 1.0
NNCD3.6A
3.47 3.83
5
120
5
10 1.0
NNCD3.9A
3.77 4.14
5
120
5
5 1.0
NNCD4.3A
4.05 4.53
5
120
5
5 1.0
NNCD4.7A
4.47 4.91
5
120
5
5 1.0
NNCD5.1A
4.85 5.35
5
100
5
5 1.5
NNCD5.6A
5.29 5.88
5
70
5
5 2.5
NNCD6.2A
5.81 6.40
5
40
5
5 3.0
NNCD6.8A
6.32 6.97
5
30
5
2 3.5
NNCD7.5A
6.88 7.64
5
25
5
0.5 4.0
NNCD8.2A
7.56 8.41
5
20
5
0.5 5.0
NNCD9.1A
8.33 9.29
5
20
5
0.5 6.0
NNCD10A
9.19 10.3
5
20
5
0.2 7.0
NNCD11A
10.18 11.26
5
20
5
0.2 8.0
NNCD12A
11.13 12.30
5
25
5
0.2 9.0
Capacitance
Ct (pF)
TYP.
220
210
200
180
170
160
140
120
110
90
90
90
80
70
70
TEST
CONDITION
VR = 0 V
f = 1 MHz
E.S.D Voltage
(kV)
MIN.
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
TEST
CONDITION
C = 150 pF
R = 330 Ω
(IEC1000
-4-2)
Notes 1. Tested with pulse (40 ms)
2. Zz is measured at IT give a small A.C. signal.
2
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