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NEC |
DATA SHEET
E.S.D NOISE CLIPPING DIODES
NNCD3.3E to NNCD12E
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES
(200 mW TYPE)
This product series is a diode developed for E.S.D (Electrostatic
Discharge) noise protection. Based on the IEC1000-4-2 test on
electromagnetic interference (EMI), the diode assures an endur-
ance of no less than 30 kV, thus making itself most suitable for
external interface circuit protection.
Type NNCD3.3E to NNCD12E Series are into 3PIN Mini Mold
Package having allowable power dissipation of 200 mW.
FEATURES
• Based on the electrostatic discharge immunity test (IEC1000-4-
2), the product assures the minimum endurance of 30 kV.
• Based on the reference supply of the set, the product achieves
a series over a wide range (15 product name lined up).
APPLICATIONS
• External interface circuit E.S.D protection.
• Circuits for Waveform clipper, Surge absorber.
PACKAGE DIMENSIONS
(in millimeters)
2.8 ± 0.2
1.5
0.65 +–00..115
2
13
Marking
MAXIMUM RATINGS (TA = 25 °C)
Power Dissipation
P
Surge Reverse Power
PRSM
Junction Temperature
Tj
Storage Temperature
Tstg
200 mW
100 W (tT = 10 µs 1 pulse)
150 °C
–55 °C to +150 °C
Fig. 6
PIN CONNECTION
1. NC
2. Anode
3. Cathode
SC-59 (EIAJ)
Document No. D11773EJ2V0DS00 (2nd edition)
Date Published December 1996 N
Printed in Japan
© 1996
NNCD3.3E to NNCD12E
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
Type Number
Breakdown VoltageNote 1
VBR (V)
Dynamic
ImpedanceNote 2
Zz (Ω)
Reverse Leakage
IR (µA)
MIN. MAX. IT (mA) MAX. IT (mA) MAX. VR (V)
NNCD3.3E
3.10 3.50
5
130
5
NNCD3.6E
3.40 3.80
5
130
5
NNCD3.9E
3.70 4.10
5
130
5
NNCD4.3E
4.01 4.48
5
130
5
NNCD4.7E
4.42 4.90
5
130
5
NNCD5.1E
4.84 5.37
5
130
5
NNCD5.6E
5.31 5.92
5
80
5
NNCD6.2E
5.86 6.53
5
50
5
NNCD6.8E
6.47 7.14
5
30
5
NNCD7.5E
7.06 7.84
5
30
5
NNCD8.2E
7.76 8.64
5
30
5
NNCD9.1E
8.56 9.55
5
30
5
NNCD10E
9.45 10.55
5
30
5
NNCD11E
10.44 11.56
5
30
5
NNCD12E
11.42 12.60
5
35
5
20 1.0
10 1.0
10 1.0
10 1.0
10 1.0
5 1.5
5 2.5
2 3.0
2 3.5
2 4.0
2 5.0
2 6.0
2 7.0
2 8.0
2 9.0
Capacitance
Ct (pF)
TYP.
220
210
200
180
170
160
140
120
110
90
90
90
80
70
70
TEST
CONDITION
VR = 0 V
f = 1 MHz
E.S.D Voltage
(kV)
MIN.
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
TEST
CONDITION
C = 150 pF
R = 330 Ω
(IEC1000
-4-2)
Notes 1. Tested with pulse (40 ms)
2. Zz is measured at IT give a small A.C. signal.
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