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NEC |
DATA SHEET
E.S.D NOISE CLIPPING DIODES
NNCD3.3F to NNCD12F
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES
(DOUBLE TYPE, ANODE COMMON)
3PIN MINI MOLD
This product series is a diode developed for E.S.D (Electrostatic
Discharge) noise protection. Based on the IEC1000-4-2 test on
electromagnetic interference (EMI), the diode assures an endur-
ance of no less than 30 kV, thus making itself most suitable for
external interface circuit protection.
Type NNCD3.3F to NNCD12F Series include two elements in
3PIN Mini Mold Package having allowable power dissipation of
200 mW.
FEATURES
• Based on the electrostatic discharge immunity test (IEC1000-4-
2), the product assures the minimum endurance of 30 kV.
• Based on the reference supply of the set, the product achieves
a series over a wide range (15 product name lined up).
PACKAGE DIMENSIONS
(in millimeters)
2.8 ± 0.2
1.5
0.65
+0.1
–0.15
2
13
Marking
APPLICATIONS
• External interface circuit E.S.D protection.
• Circuits for Waveform clipper, Surge absorber.
PIN CONNECTION
1. K1: Cathode 1 SC-59 (EIAJ)
2. K2: Cathode 2
3. A : Anode (common)
MAXIMUM RATINGS (TA = 25 °C)
Power Dissipation
P
Surge Reverse Power
PRSM
Junction Temperature
Tj
Storage Temperature
Tstg
200 mW
(Total)
100 W (tT = 10 µs 1 pulse) Fig. 6
150 °C
–55 °C to +150 °C
K2
2A
K1 3
1
Document No. D11774EJ2V0DS00 (2nd edition)
Date Published December 1996 N
Printed in Japan
© 1996
NNCD3.3F to NNCD12F
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) (A-K1, A-K2)
Type Number
Breakdown VoltageNote 1
VBR (V)
Dynamic
ImpedanceNote 2
Zz (Ω)
Reverse Leakage
IR (µA)
MIN. MAX. IT (mA) MAX. IT (mA) MAX. VR (V)
NNCD3.3F
3.10 3.50
5
130
5
NNCD3.6F
3.40 3.80
5
130
5
NNCD3.9F
3.70 4.10
5
130
5
NNCD4.3F
4.01 4.48
5
130
5
NNCD4.7F
4.42 4.90
5
130
5
NNCD5.1F
4.84 5.37
5
130
5
NNCD5.6F
5.31 5.92
5
80
5
NNCD6.2F
5.86 6.53
5
50
5
NNCD6.8F
6.47 7.14
5
30
5
NNCD7.5F
7.06 7.84
5
30
5
NNCD8.2F
7.76 8.64
5
30
5
NNCD9.1F
8.56 9.55
5
30
5
NNCD10F
9.45 10.55
5
30
5
NNCD11F
10.44 11.56
5
30
5
NNCD12F
11.42 12.60
5
35
5
20 1.0
10 1.0
10 1.0
10 1.0
10 1.0
5 1.5
5 2.5
2 3.0
2 3.5
2 4.0
2 5.0
2 6.0
2 7.0
2 8.0
2 9.0
Capacitance
Ct (pF)
TYP.
220
210
200
180
170
160
140
120
110
90
90
90
80
70
70
TEST
CONDITION
VR = 0 V
f = 1 MHz
E.S.D Voltage
(kV)
MIN.
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
TEST
CONDITION
C = 150 pF
R = 330 Ω
(IEC1000
-4-2)
Notes 1. Tested with pulse (40 ms)
2. Zz is measured at IT give a small A.C. signal.
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