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PDF MMBD2835LT1 Data sheet ( Hoja de datos )
| Número de pieza | MMBD2835LT1 | |
| Descripción | Monolithic Dual Switching Diodes | |
| Fabricantes | Motorola Semiconductors | |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBD2835LT1/D
Monolithic Dual Switching Diodes MMBD2835LT1
MMBD2836LT1
ANODE
3
CATHODE
1
2
CATHODE
MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol
Reverse Voltage
MMBD2835LT1
MMBD2836LT1
VR
Forward Current
THERMAL CHARACTERISTICS
IF
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Symbol
PD
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
RqJA
PD
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
RqJA
TJ, Tstg
MMBD2835LT1 = A3X; MMBD2836LT1 = A2X
Value
35
75
100
Max
225
1.8
556
300
2.4
417
– 55 to +150
Unit
Vdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
OFF CHARACTERISTICS
Reverse Breakdown Voltage (IR = 100 µAdc)
MMBD2835LT1
MMBD2836LT1
V(BR)
Reverse Voltage Leakage Current
(VR = 30 Vdc)
(VR = 50 Vdc)
MMBD2835LT1
MMBD2836LT1
Diode Capacitance (VR = 0 V, f = 1.0 MHz)
Forward Voltage (IF = 10 mAdc)
Forward Voltage (IF = 50 mAdc)
Forward Voltage (IF = 100 mAdc)
Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1)
1. FR– 5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
IR
CT
VF
trr
3
1
2
CASE 318 – 08, STYLE 12
SOT– 23 (TO – 236AB)
Min Max Unit
35 — Vdc
75 —
— nAdc
— 100
100
— 4.0 pF
— 1.0 Vdc
— 1.0
— 1.2
— 4.0 ns
Thermal Clad is a trademark of the Bergquist Company
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1997
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MMBD2835LT1.PDF ] | |
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