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MMBD1704 반도체 회로 부품 판매점

High Conductance Low Leakage Diode



Fairchild 로고
Fairchild
MMBD1704 데이터시트, 핀배열, 회로
Discrete POWER & Signal
Technologies
MMBD1701/A / 1703/A / 1704/A / 1705/A
3
SOT-23
3
85
12
2 MARKING
MMBD1701 85
MMBD1701A 85A
1
MMBD1703 87
MMBD1703A 87A
MMBD1704 88
MMBD1704A 88A
MMBD1705 89
MMBD1705A 89A
CONNECTION DIAGRAMS
1701 3
3 1703
1
1704
2 NC
3
12
3 1705
1 21 2
High Conductance Low Leakage Diode
Sourced from Process 1T.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
W IV
IO
IF
if
if(surge)
Tstg
TJ
Working Inverse Voltage
Average Rectified Current
DC Forward Current
Recurrent Peak Forward Current
Peak Forward Surge Current
Pulse width = 1.0 second
Storage Temperature Range
Operating Junction Temperature
20
50
150
150
250
-55 to +150
150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Units
V
mA
mA
mA
mA
°C
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
PD Total Device Dissipation
Derate above 25°C
RθJA Thermal Resistance, Junction to Ambient
MMBD1701/A /1703/A-1705/A*
350
2.8
357
*Device mounted on glass epoxy PCB 1.6" X 1.6" X 0.06"; mounting pad for the collector lead min. 0.93 in2
Units
mW
mW /°C
°C/W
©1997 Fairchild Semiconductor Corporation
MMBD1700 Rev. B


MMBD1704 데이터시트, 핀배열, 회로
High Conductance Low Leakage Diode
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
BV
IR
VF
CO
TRR
Parameter
Breakdown Voltage
Reverse Current
Forward Voltage
Diode Capacitance
Reverse Recovery Time
MMBD1701-1705
MMBD1701A-1705A
Test Conditions
IR = 5.0 µA
VR = 20 V
IF = 10 µA
IF = 100 µA
IF = 1.0 mA
IF = 10 mA
IF = 20 mA
IF = 50 mA
VR = 0, f = 1.0 MHz
IF = IR = 10 mA IRR = 1.0 mA,
RL = 100
IF = IR = 10 mA IRR = 1.0 mA,
RL = 100
Min
30
420
520
640
760
810
0.89
Max
50
500
610
740
880
950
1.1
1.0
Units
V
nA
mV
mV
mV
mV
mV
V
pF
700 pS
1.0 nS
Typical Characteristics
REVERSE VOLTAGE vs REVERSE CURRENT
BV - 1.0 to 100 uA
60
Ta= 25°C
REVERSE CURRENT vs REVERSE VOLTAGE
IR - 1 to 22 V
10
Ta= 25°C
50
40
1
23 5
10 20 30 50 100
IR - REVERSE CURRENT (uA)
5
0
1
23
5
10 20
VR - REVERSE VOLTAGE (V)
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten (10) Degree C increase in Temperature
FORWARD VOLTAGE vs FORWARD CURRENT
VF - 1.0 to 100 uA
600 Ta= 25°C
550
500
450
400
350
300
1
23 5
10 20 30 50
IF - FORWARD CURRENT (uA)
100
FORWARD VOLTAGE vs FORWARD CURRENT
VF - 0.1 to 10 mA
850 Ta= 25°C
800
750
700
650
600
550
0.1
0.2 0.3 0.5 1
23 5
I F - FORWARD CURRENT (mA)
10




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