파트넘버.co.kr MM002-08 데이터시트 PDF


MM002-08 반도체 회로 부품 판매점

3 PHASE DIODE BRIDGE



Microsemi 로고
Microsemi
MM002-08 데이터시트, 핀배열, 회로
2830 S. Fairview St.
Santa Ana, CA 92704
PH: (714) 979-8220
FAX: (714) 966-5256
MM002-XX
Features
SERIES
Available in standard switching (low VF) as MM002-xx or ultrafast
switching as MM002-xxU
Compact and rugged construction offering weight and space savings
Available with PC board solderable pins (see mechanical outline below)
or threaded terminals (add “T”suffix to part number, see option below)
HPM (Hermetic Power Module)
600- 800 -1000 Volts
150 Amps
80 nsec to 5 µsec
Isolation voltage capability (in reference to the base) in excess of 3kV
Very low thermal resistance
Thermally matched construction provides excellent temperature and
power cycling capability
3 PHASE DIODE
BRIDGE
Additional voltage ratings or terminations available upon request
Maximum Ratings per leg @ 25°C (unless otherwise specified)
PART NUMBER
MM002-06
MM002-08 MM002-10
Peak Repetitive Reverse Voltage, VRRM
Peak Working Reverse Voltage, VRWM
DC Reverse Blocking Voltage, VR
Average Forward Current, IO
Non-Repetitive Peak Surge Current, IFSM
MM002-XX
MM002-XXU
Operating and Storage Junction Temperature Range
Thermal resistance, junction to base
per diode
per module
600 V
50 A
350 A
200 A
-55°C to
+175°C
1.5°C/W max
1°C/W typ.
0.3°C/W max.
800 V
50 A
350 A
175 A
-55°C to
+175°C
1.5°C/W max
1°C/W typ.
0.3°C/W max.
1000 V
50 A
350 A
175 A
-55°C to
+175°C
1.5°C/W max
1°C/W typ.
0.3°C/W max
Mechanical Outline
Datasheet# MSC0325A


MM002-08 데이터시트, 핀배열, 회로
MM002-XX
SERIES
Electrical Parameters per leg @ 25°C (unless otherwise specified)
DESCRIPTION
Reverse Current,
Reverse Current,
MM002-06
MM002-08
MM002-10
MM002-06U
MM002-08U
MM002-10U
MM002-06
MM002-08
MM002-10
MM002-06U
MM002-08U
MM002-10U
Forward Voltage, MM002-06
MM002-08
MM002-10
MM002-06U
MM002-08U
MM002-10U
Forward Voltage, MM002-06
MM002-08
MM002-10
MM002-06U
MM002-08U
MM002-10U
Forward Voltage, MM002-06
MM002-08
MM002-10
MM002-06U
MM002-08U
MM002-10U
Reverse Recovery MM002-06
Time
MM002-08
MM002-10
MM002-06U
MM002-08U
MM002-10U
Junction
MM002-06
Capacitance
MM002-08
MM002-10
MM002-06U
MM002-08U
Notes
MM002-10U
(1) Pulse test, t 300 µs, duty cycle δ≤2%
SYMBOL
IR1
IR2
VF1
CONDITIONS
VR= 600 V
VR= 800 V
VR= 1000 V
VR= 600 V
VR= 800 V
VR= 1000 V
VR= 600 V, TA= 100 °C
VR= 800 V, TA= 100 °C
VR= 1000 V, TA= 100 °C
VR= 600 V, TA= 100 °C
VR= 800 V, TA= 100 °C
VR= 1000 V, TA= 100 °C
IF= 5 A
VF2 IF= 50 A
VF3 IF= 5 A, TA= -55°C
trr IF= 0.5 A; IR= 1 A;
IR(rec)= 0.25A
Cj VR= 10 Vdc; f= 1 MHz;
Vsig= 50 mV(pp) ,max
MIN TYP.
MAX
10
10
10
50
50
50
5
5
5
5
5
5
0.95
0.95
1.0
1.0
1.0
1.25
1.5
1.5
2.1
1.7
1.7
3
1.05
1.05
1.1
1.1
1.1
1.35
5
5
5
60
60
80
550
550
250
550
550
250
UNIT
µA
mA
V
V
V
µsec
nsec
pF




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MM002-08 diode

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