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ZV950V2TA 반도체 회로 부품 판매점

SILICON LOW VOLTAGE HYPERABRUPT VARACTOR DIODES



Zetex Semiconductors 로고
Zetex Semiconductors
ZV950V2TA 데이터시트, 핀배열, 회로
950 series
SILICON LOW VOLTAGE HYPERABRUPT VARACTOR DIODES
ZV950V2, ZV952V2, ZV953V2, ZMDC953, FSD273
Device Description
A range of silicon varactor diodes for use in frequency control and
filtering. Featuring closely controlled CV characteristics, low voltage
operation and high Q. Low reverse current ensures very low phase
noise performance. These parts can be used with control voltages from
0.5V to 2.5V, making them ideal for 3 volt systems. Available in
miniature surface mount packages.
Features
Close tolerance C-V characteristics
Tuning from 0.5 to 2.5 Volts to suit 3 volt systems
Low IR (typically 10pA)
Excellent phase noise performance
High Q at low voltage
Miniature surface mount packages
Band selection for DAB applications - FSD273
Applications
VCXO and TCXO
Wireless communications
Pagers
Mobile radio
Digital Radio receivers
ISSUE 2 - MAY 2002
1


ZV950V2TA 데이터시트, 핀배열, 회로
950 series
TUNING CHARACTERISTICS at Tamb = 25 C
PART
CAPACITANCE pF
VR=0.5V, f=1MHz
ZV950V2
ZV952V2
ZV953V2
ZMDC953(DUAL)
Min
9.5
19
45
45
CAPACITANCE pF CAPACITANCE
VR=1.5V,
f=1MHz
RATIO C0.5 / C2.5
f=1MHz
Min Max
Min
6.3 7.8
2.0
12.7
15.7
2.0
30 37
2.0
30 37
2.0
Minimum Q
VR=0.5V
f=50MHz
250
250
200
250
ZMDC953 is available banded to tighter capacitance range. This product has the order code FSD273TA.
Measured at VR=1.5V the bands are
Band A = 30.0 to 32.5
Band B = 32.3 to 34.7
Band C = 34.5 to 37.0
Product is supplied in reels. A banded reel will only contain a single band. Shipments containing several reels
may have reels in different bands. It is not possible to supply a specific band as processing affects which bands
are available
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Reverse voltage
Forward current
Power dissipation at Tamb = 25ЊC SOD523
Power dissipation at Tamb = 25ЊC SOT323
SYMBOL
VR
IF
Ptot
Ptot
MAX
12
100
250
300
UNIT
V
mA
mW
mW
ELECTRICAL CHARACTERISTICS at Tamb = 25°C
PARAMETER
Reverse breakdown voltage
Reverse voltage leakage
CONDITIONS
IR = 10uA
VR = 8V
MIN.
12
TYP.
0.010
MAX.
20
UNIT
V
nA
ISSUE 2 - MAY 2002
2




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ZV950V2TA diode

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ZV950V2TA

SILICON LOW VOLTAGE HYPERABRUPT VARACTOR DIODES - Zetex Semiconductors