S07B 반도체 회로 부품 판매점
Small Surface Mount Diodes
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 Vishay Siliconix |
VISHAY
S07B / 07D / 07G / 07J / 07M
Vishay Semiconductors
Small Surface Mount Diodes
Features
• For surface mounted applications
• Low profile package
• Ideal for automated placement
• Glass passivated
• High temperature soldering:
260 °C/ 10 seconds at terminals
Mechanical Data
Case: JEDEC -DO219-AB (SMF®) Plastic case
Polarity: Band denotes cathode end
Weight: approx. 0.01 g
17249
Packaging codes-options:
GS18 - 10 K per 13" reel (8 mm tape), 50 K/box
GS08 - 3 K per 7" reel (8 mm tape), 30 K/box
Parts Table
S07B
Part
S07D
S07G
S07J
S07M
Marking
SB
SD
SG
SJ
SM
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Maximum repetitive peak reverse voltage
Test condition
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current Ttp = 75 °C1)
Peak forward surge current 8.3 ms single
half sine-wave
TA = 65 °C1)
TL = 25 °C
1) Averaged over any 20 ms period
Part
S07B
S07D
S07G
S07J
S07M
S07B
S07D
S07G
S07J
S07M
S07B
S07D
S07G
S07J
S07M
Symbol
VRRM
VRRM
VRRM
VRRM
VRRM
VRMS
VRMS
VRMS
VRMS
VRMS
VDC
VDC
VDC
VDC
VDC
IF(AV)
IF(AV)
IFSM
Value
100
200
400
600
1000
70
140
280
420
700
100
200
400
600
1000
1.5
0.7
25
Unit
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
A
A
A
Document Number 85733
Rev. 1.8, 24-Mar-04
www.vishay.com
1
S07B / 07D / 07G / 07J / 07M
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Thermal resistance junction to
ambient air2)
Operating junction and storage
temperature range
2) Mounted on epoxy substrate with 3 x 3 mm CU pads (≥ 40 µm thick)
Symbol
RθJA
TJ, TSTG
Value
180
- 55 to + 150
VISHAY
Unit
K/W
°C
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Maximum instantaneous
forward voltage
1.0 A3)
VF
1.1 V
Maximum DC reverse current at TA = 25 °C
rated DC blocking voltage
IR
10 µA
TA = 125 °C
IR
50 µA
Reverse recovery time
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
trr
1.8 µs
Typical capacitance at 4 V, MHz
Cj 4 pF
3) Pulse test: 300 µ pulse width, 1 % duty cycle
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
1.2
Resistive or Inductive Load
1.0
0.8
0.6
0.4
0.2
3.0 x 3.0mm 40 µm
Thick Copper Pad Areas
17375
0
0
20 40 60 80 100 120 140 160
Ambient Temperature (jC)
Fig. 1 Forward Current Derating Curve
1000
TJ = 150°C
TJ = 25°C
TJ = 100°C
17376
100
600
700 800 900 1000
Instantaneous Forward Voltage (mV)
1100
Fig. 2 Typical Instantaneous Forward Characteristics
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2
Document Number 85733
Rev. 1.8, 24-Mar-04
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S07B diode
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