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Fairchild Semiconductor |
PACKAGE DIMENSIONS
0.174 (4.44)
0.060 (1.50)
R 0.030 (0.76)
0.224 (5.71)
0.047 (1.20)
0.177 (4.51)
0.5 (12.7)
MIN
0.030 (0.76)
EMITTER
0.060 (1.52)
0.100 (2.54)
0.020 (0.51)
SQ. (2X)
NOTES:
1. Dimensions for all drawings are in inches (millimeters).
2. Tolerance of ± .010 (.25) on all non nominal dimensions
unless otherwise specified.
PLASTIC INFRARED
LIGHT EMITTING DIODE
QEE213
;@;@
SCHEMATIC
ANODE
CATHODE
DESCRIPTION
The QEE213 is a 940nm GaAs LED encapsulated in a medium angle, thin plastic sidelooker package.
FEATURES
• Wavelength = 940 nm, GaAs
• Package Type: Sidelooker
• Medium Beam Angle, 50°
• Clear Plastic Package
• Matched Photosensors: QSE213 and QSE243
2001 Fairchild Semiconductor Corporation
DS300239 9/18/01
1 OF 4
www.fairchildsemi.com
PLASTIC INFRARED
LIGHT EMITTING DIODE
QEE213
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)(2,3,4)
Soldering Temperature (Flow)(2,3)
Continuous Forward Current
Reverse Voltage
Peak Forward Current(5)
Power Dissipation(1)
Symbol
TOPR
TSTG
TSOL-I
TSOL-F
IF
VR
IFP
PD
Rating
-40 to + 100
-40 to + 100
240 for 5 sec
260 for 10 sec
100
5
1
100
Unit
°C
°C
°C
°C
mA
V
A
mW
ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25°C)
Parameter
Test Conditions
Symbol
Peak Emission Wavelength
Emission Angle
Forward Voltage
Reverse Current
Radiant Intensity
Rise Time
Fall Time
IF = 100 mA
IF = 100 mA
IF = 100 mA, tp = 20 ms
VR = 5 V
IF = 100 mA, tp = 20 ms
IF = 100 mA
tp = 100 µs, T = 10 mS
lP
U
VF
IR
Ie
tr
tf
Min
—
—
—
—
2
—
—
Typ
940
±25
—
—
—
1
1
Max Units
— nm
— Deg.
1.5 V
10 µA
— mW/sr
— µs
—
NOTES
1. Derate power dissipation linearly 2.67 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16” (1.6 mm) minimum from housing.
5. Pulse conditions: tp = 100 µs, T = 10 ms.
www.fairchildsemi.com
2 OF 4
9/18/01 DS300239
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