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QEE122 반도체 회로 부품 판매점

PLASTIC INFRARED LIGHT EMITTING DIODE



Fairchild Semiconductor 로고
Fairchild Semiconductor
QEE122 데이터시트, 핀배열, 회로
PLASTIC INFRARED
LIGHT EMITTING DIODE
PACKAGE DIMENSIONS
0.087 (2.22)
0.175 (4.44)
Ø0.065 (1.65)
0.050 (1.27)
Ø0.095 (2.41)
0.200 (5.08)
CATHODE
0.500 (12.70)
MIN
ANODE
0.020 (0.51) SQ.
(2X)
0.030 (0.76)
0.100 (2.54)
NOM
0.100 (2.54)
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless
otherwise specied.
QEE122 QEE123
SCHEMATIC
ANODE
CATHODE
DESCRIPTION
The QEE12X is a 880 nm AlGaAs LED encapsulated in a medium wide angle, plastic sidelooker package.
FEATURES
λ= 880 nm
• Package Type = Sidelooker
• Chip Material = AlGaAs
• Matched Photosensor: QSE113
• Medium Wide Emission Angle, 50°
• Package Material: Clear Epoxy
• High Output Power
• Orange stripe on the top side
© 2002 Fairchild Semiconductor Corporation
Page 1 of 4
4/30/02


QEE122 데이터시트, 핀배열, 회로
PLASTIC INFRARED
LIGHT EMITTING DIODE
QEE122 QEE123
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specied)
Parameter
Symbol
Rating
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)(2,3,4)
Soldering Temperature (Flow)(2,3)
Continuous Forward Current
Reverse Voltage
Power Dissipation(1)
TOPR
TSTG
TSOL-I
TSOL-F
IF
VR
PD
-40 to + 100
-40 to + 100
240 for 5 sec
260 for 10 sec
50
5
100
NOTES:
1. Derate power dissipation linearly 1.33 mW/°C above 25°C.
2. RMA ux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. . Soldering iron 1/16" (1.6 mm) minimum from housing
Unit
°C
°C
°C
°C
mA
V
mW
ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25°C)
Parameter
Peak Emission Wavelength
Emission Angle
Forward Voltage
Reverse Current
Radiant Intensity QEE122
Radiant Intensity QEE123
Rise Time
Fall Time
Test Conditions
Symbol Min
Typ
Max Units
IF = 100 mA
λPE 940 nm
IF = 100 mA
2Θ1/2
50
Deg.
IF = 100 mA, tp = 20 ms
VF
1.7
V
VR = 5 V
IR — — 10 µA
IF = 100 mA, tp = 20 ms
IE
4
16 mW/sr
IF = 100 mA, tp = 20 ms
IE
8
— — mW/sr
IF = 100 mA
tr
800
ns
tf
800
ns
© 2002 Fairchild Semiconductor Corporation
Page 2 of 4
4/30/02




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QEE122 diode

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