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QEB373 반도체 회로 부품 판매점

SUBMINIATURE PLASTIC INFRARED EMITTING DIODE



Fairchild Semiconductor 로고
Fairchild Semiconductor
QEB373 데이터시트, 핀배열, 회로
QEB373
SUBMINIATURE PLASTIC INFRARED
EMITTING DIODE
PACKAGE DIMENSIONS
0.276 (7.0)
MIN
0.024 (0.6)
0.016 (0.4)
0.074 (1.9)
CATHODE
0.087 (2.2)
0.071 (1.8)
0.019 (0.5)
0.012 (0.3)
.118 (3.0)
.102 (2.6)
0.008 (0.21)
0.004 (0.11)
.059 (1.5)
.051 (1.3)
0.055 (1.4)
0.024 (0.6)
0.106 (2.7)
0.091 (2.3)
NOTES:
1. Dimensions are in inches (mm).
2. Tolerance of ± .010 (.25) on all non nominal dimensions
unless otherwise specified.
FEATURES
• T-3/4 (2mm) Surface Mount Package
• Tape & Reel Option (See Tape & Reel Specifications)
• Lead Form Options: Gullwing, Yoke, Z-Bend
• Narrow Emission Angle, 24°
• Wavelength = 880nm, AlGaAs
• Clear Lens
SCHEMATIC
• Matched Photosensor: QSB363
• High Radiant Intensity
ANODE
CATHODE
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)(2,3,4)
Soldering Temperature (Flow)(2,3)
Continuous Forward Current
Reverse Voltage
Power Dissipation(1)
Symbol
TOPR
TSTG
TSOL-I
TSOL-F
IF
VR
PD
Rating
-40 to +100
-40 to +100
240 for 5 sec
260 for 10 sec
50
5
100
Units
°C
°C
°C
°C
mA
V
mW
NOTES
1. Derate power dissipation linearly
1.33 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols
are recommended as cleaning
agents.
4. Soldering iron tip at 1/16” (1.6mm)
from housing
ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25°C)
PARAMETER
Peak Emission Wavelength
Emission Angle
Forward Voltage
Reverse Current
Radiant Intensity
Rise Time
Fall Time
TEST CONDITIONS
IF = 100mA
IF = 100mA
IF = 100mA, tP = 20ms
VR = 5V
IF = 100mA, tP = 20ms
IF = 100mA,
tP = 20ms
SYMBOL
lP
U
VF
IR
Ie
tr
tf
MIN.
16
TYP.
MAX.
880 —
±12 —
— 1.7
— 100
——
800 —
800 —
UNITS
nm
Deg.
V
µA
mW/sr
ns
ns
1 of 4
100008A


QEB373 데이터시트, 핀배열, 회로
QEB373
SUBMINIATURE PLASTIC INFRARED
EMITTING DIODE
TYPICAL PERFORMANCE CURVES
Fig. 1 Maximum Forward Current vs.
Temperature
200
160
Fig. 2 Relative Radiant Intensity vs.
Wavelength
100
80
IF = 20mA
TA = 25˚C
120
80
40
0
-25 0 25 50 75 85 100
Ambient Temperature TA (˚C)
60
40
20
0
820 840 860 880 900 920 940 960 980
Wavelengthl l (nm)
2 of 4
Fig. 3 Peak Emission Wavelength vs.
Ambient Temperature
920
900
880
860
840
-25
0
25 50 75 100
Ambient Temperature TA (˚C)
Fig. 5 Relative Radiant Flux vs.
Ambient Temperature
20
10
5
2
1
0.5
0.2
0.1
-25
0
25 50 75 100
Ambient Temperature TA (˚C)
Fig. 4 Forward Current vs.
Forward Voltage
500
200
100
50
20
10
5
2
1
1 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Forward Voltage VF (V)
Fig. 6 Relative Radiant Intensity vs.
Angular Displacement
30 20 10 0 10 20 30
40 40
50 50
60 60
70 70
80 80
90 90
0.6 0.4 0.2 0 0.2 0.4 0.6
Ambient Temperature TA (˚C)
100008A




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QEB373 diode

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SUBMINIATURE PLASTIC INFRARED EMITTING DIODE - Fairchild Semiconductor