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ROHM Semiconductor |
Data Sheet
Shottky barrier diode
RB081L-20
Applications
General rectification
Dimensions (Unit : mm)
Features
1) Small power mold type. (PMDS)
2) Low VF, Low IR.
3) High reliability.
Construction
Silicon epitaxial planar
2.6±0.2
39
①②
1.5±0.2
0.1±0.02
0.1
2.0±0.2
ROHM : PMDS
JEDEC : SOD-106
① ② Manufacuture Date
Land size figure (Unit : mm)
2.0
PMDS
Structure
Taping specifications (Unit : mm)
2.0±0.05
4.0±0.1
φ1.55 ±0.05
0.3
2.9±0.1
4.0±0 .1
φ1.55
2 .8MAX
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current (*1)
Forward current surge peak (60Hz・1cyc)
Junction temperature
VRM
VR
Io
IFSM
Tj
Storage temperature
Tstg
(*1)Mounted on epoxy board. 180°Half sine wave
Limits
25
20
5
70
125
40 to 125
Unit
V
V
A
A
°C
°C
Electrical characteristics (Ta=25°C)
Parameter
Forward voltage
Reverse current
Symbol Min. Typ. Max.
VF - - 0.45
IR - - 700
Unit Conditions
V IF=5.0A
μA VR=20V
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© 2011 ROHM Co., Ltd. All rights reserved.
1/3
2011.04 - Rev.B
RB081L-20
Data Sheet
10
Ta=75℃
1 Ta=125℃
Ta=25℃
1000000
100000
10000
0.1
Ta=-25℃
1000
100
0.01
10
0.001
0
100 200 300 400 500
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
600
1
0
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
5 10 15 20 25
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
30
1000
100
10
1
0
f=1MHz
5 10 15 20 25
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
30
400
1000
950
Ta=25℃
IF=5A
900
Ta=25℃
VR=20V
940
Ta=25℃
f=1MHz
390
n=30pcs
800
n=30pcs
930
VR=0V
700 920 n=10pcs
380 600 910
500 900
370 400 890
300 880
360
AVE:380.3mV
350
200
100
AVE:201.3uA
0
870
860 AVE:898.1pF
850
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
300 30
250
Ifsm 1cyc
25
200
8.3ms
20
150 15
Ta=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
300
250
200
150
Ifsm
8.3ms 8.3ms
1cyc
100
50
AVE:196.0A
0
IFSM DISRESION MAP
10
AVE:11.7ns
5
0
trr DISPERSION MAP
100
50
0
1 10 100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
300
250
200
150
100
50
0
1
Ifsm
t
1000
100
Mounted on epoxy board
Rth(j-a)
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
100
10
1
0.1
0.001
IM=100mA
Rth(j-c)
IF=1A
1ms time
300us
0.1 10
TIME:t(s)
Rth-t CHARACTERISTICS
1000
5
4
D=1/2
3
Sin(θ=180)
2
DC
1
0
0 2 4 6 8 10
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
2/3
2011.04 - Rev.B
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