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RHRP640CC 반도체 회로 부품 판매점

6A/ 400V - 600V Hyperfast Dual Diodes



Intersil Corporation 로고
Intersil Corporation
RHRP640CC 데이터시트, 핀배열, 회로
RHRP640CC, RHRP650CC, RHRP660CC
January 1998
File Number 4464
6A, 400V - 600V Hyperfast Dual Diodes
RHRP640CC, RHRP650CC and RHRP660CC are hyperfast
dual diodes with soft recovery characteristics (trr < 30ns).
They have half the recovery time of ultrafast diodes and are
silicon nitride passivated ion-implanted hepaticas planar
construction.
These devices are intended for use as freewheeling/clamping
diodes and rectifiers in a variety of switching power supplies
and other power switching applications. Their low stored charge
and ultrafast soft recovery minimize ringing and electrical noise
in many power switching circuits reducing power loss in the
switching transistors.
Formerly developmental type TA49057.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RHRP640CC
TO-220AB
RHRP640C
RHRP650CC
TO-220AB
RHRP650C
RHRP660CC
TO-220AB
RHRP660C
NOTE: When ordering, use the entire part number.
Features
• Hyperfast with Soft Recovery . . . . . . . . . . . . . . . .<30ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . 175oC
• Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . . .600V
• Avalanche Energy Rated
• Planar Construction
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Symbol
K
A1 A2
Package
JEDEC TO-220AB
ANODE 2
CATHODE
ANODE 1
CATHODE
(FLANGE)
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999


RHRP640CC 데이터시트, 핀배열, 회로
RHRP640CC, RHRP650CC, RHRP660CC
Absolute Maximum Ratings (Per Leg) TC = 25oC, Unless Otherwise Specified
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VR
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV)
TC = 152oC
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM
Square Wave, 20kHz
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM
Halfwave, 1 phase, 60Hz
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD
Avalanche Energy (See Figures 10 and 11). . . . . . . . . . . . . . . . . . . . . EAVL
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . .TSTG,TJ
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . Tpkg
RHRP640CC
400
400
400
6
12
60
50
10
-65 to 175
300
260
RHRP650CC
500
500
500
6
12
60
50
10
-65 to 175
300
260
RHRP660CC
600
600
600
6
UNITS
V
V
V
A
12 A
60 A
50
10
-65 to 175
300
260
W
mJ
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications (Per Leg) TC = 25oC, Unless Otherwise Specified
RHRP640CC
RHRP650CC
RHRP660CC
SYMBOL
TEST CONDITION
MIN TYP MAX MIN TYP MAX MIN TYP MAX UNITS
VF IF = 6A
IF = 6A, TC = 150oC
- - 2.1 - - 2.1 - - 2.1 V
- - 1.7 - - 1.7 - - 1.7 V
IR VR = 400V
- - 100 - - - - - - µA
VR = 500V
- - - - - 100 - - - µA
VR = 600V
- - - - - - - - 100 µA
VR = 400V, TC = 150oC - - 500 - - - - - - µA
VR = 500V, TC = 150oC - - - - - 500 - - - µA
VR = 600V, TC = 150oC - - - - - - - - 500 µA
trr IF = 1A, dIF/dt = 200A/µs -
- 30 -
- 30 -
- 30 ns
IF = 6A, dIF/dt = 200A/µs
-
- 35 -
- 35 -
- 35 ns
ta IF = 6A, dIF/dt = 200A/µs - 16 -
- 16 -
- 16 -
ns
tb IF = 6A, dIF/dt = 200A/µs - 8.5 -
- 8.5 -
- 8.5 -
ns
QRR
IF = 6A, dIF/dt = 200A/µs
-
45
-
- 45 -
- 45 - nC
CJ
RθJC
VR = 10V, IF = 0A
- 20 -
- -3
- 20 -
- -3
- 20 - pF
- - 3 oC/W
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%).
IR = Instantaneous reverse current.
trr = Reverse recovery time (See Figure 9), summation of ta + tb.
ta = Time to reach peak reverse current (See Figure 9).
tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9).
QRR = Reverse recovery charge.
CJ = Junction Capacitance.
RθJC = Thermal resistance junction to case.
pw = pulse width.
D = duty cycle.
2




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RHRP640CC diode

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RHRP640CC

6A/ 400V - 600V Hyperfast Dual Diodes - Intersil Corporation