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RHRG7570 반도체 회로 부품 판매점

75A/ 700V - 1000V Hyperfast Diodes



Intersil Corporation 로고
Intersil Corporation
RHRG7570 데이터시트, 핀배열, 회로
RHRG7570, RHRG7580, RHRG7590, RHRG75100
Data Sheet
April 1995 File Number 3923.1
75A, 700V - 1000V Hyperfast Diodes
RHRG7570, RHRG7580, RHRG7590 and RHRG75100
(TA49068) are hyperfast diodes with soft recovery character-
istics (tRR < 85ns). They have half the recovery time of
ultrafast diodes and are silicon nitride passivated ion-
implanted epitaxial planar construction.
These devices are intended for use as freewheeling/clamping
diodes and rectifiers in a variety of switching power supplies
and other power switching applications. Their low stored
charge and hyperfast soft recovery minimize ringing and elec-
trical noise in many power switching circuits reducing power
loss in the switching transistors.
Ordering Information
PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
RHRG7570
TO-247
RHRG7570
RHRG7580
TO-247
RHRG7580
RHRG7590
TO-247
RHRG7590
RHRG75100
TO-247
RHRG75100
NOTE: When ordering, use the entire part number.
Features
• Hyperfast with Soft Recovery . . . . . . . . . . . . . . . .<85ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . +175oC
• Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . .1000V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Package
JEDEC STYLE TO-247
CATHODE
(BOTTOM
SIDE METAL)
ANODE
CATHODE
Symbol
K
A
Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified
RHRG7570
Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . .VRRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . VRWM
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR
Average Rectified
(TC = +52oC)
Forward
Current
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
IF(AV)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . .IFSM
(Square Wave, 20kHz)
700
700
700
75
150
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . .IFSM
(Halfwave, 1 Phase, 60Hz)
750
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Avalanche Energy (L = 40mH) (See Figures 10 and 11). . . . EAVL
Operating and Storage Temperature . . . . . . . . . . . . . . . . TSTG, TJ
190
50
-65 to +175
RHRG7580
800
800
800
75
150
750
190
50
-65 to +175
RHRG7590
900
900
900
75
RHRG75100
1000
1000
1000
75
UNITS
V
V
V
A
150 150 A
750 750 A
190
50
-65 to +175
190
50
-65 to +175
W
mj
oC
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999


RHRG7570 데이터시트, 핀배열, 회로
RHRG7570, RHRG7580, RHRG7590, RHRG75100
Electrical Specifications TC = +25oC, Unless Otherwise Specified
RHRG7570
RHRG7580
RHRG7590
RHRG75100
SYMBOL
TEST CONDITION
MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX UNITS
VF IF = 75A, TC = +25oC
-
IF = 75A, TC = +150oC
-
IR VR = 700V, TC = +25oC
-
VR = 800V, TC = +25oC
-
VR = 900V, TC = +25oC
-
VR = 1000V, TC = +25oC
-
IR
VR = 700V, TC = +150oC
-
VR = 800V, TC = +150oC
-
VR = 900V, TC = +150oC
-
VR = 1000V, TC = +150oC -
- 3.0 -
- 2.5 -
- 500 -
---
---
---
- 2.0 -
---
---
---
- 3.0 -
- 2.5 -
---
- 500 -
---
---
---
- 2.0 -
---
---
- 3.0 -
- 2.5 -
---
---
- 500 -
---
---
---
- 2.0 -
---
- 3.0
V
- 2.5
V
- - µA
- - µA
- - µA
- 500 µA
- - mA
- - mA
- - mA
- 2.0 mA
tRR IF = 1A, dIF/dt = 100A/µs
-
- 85 -
- 85 -
- 85 -
- 85 ns
IF = 75A, dIF/dt = 100A/µs -
- 100 -
- 100 -
- 100 -
- 100 ns
tA IF = 75A, dIF/dt = 100A/µs - 55 -
- 55 -
- 55 -
- 55 -
ns
tB IF = 75A, dIF/dt = 100A/µs - 40 -
- 40 -
- 40 -
- 40 -
ns
QRR IF = 75A, dIF/dt = 100A/µs - 240 -
- 240 -
- 240 -
- 240 -
nC
CJ
RθJC
VR = 10V, IF = 0A
- 220 -
- 220 -
- 220 -
- 220 -
pF
- - 0.8 - - 0.8 - - 0.8 - - 0.8 oC/W
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%).
IR = Instantaneous reverse current.
tRR = Reverse recovery time (Figure 2), summation of tA + tB.
tA = Time to reach peak reverse current (See Figure 2).
tB = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 2).
QRR = Reverse recovery charge.
CJ = Junction capacitance.
RθJC = Thermal resistance junction to case.
EAVL = Controlled avalanche energy. (See Figures 10 and 11).
pw = pulse width.
D = duty cycle.
V1 AMPLITUDE CONTROLS IF
V2 AMPLITUDE CONTROLS dIF/dt
L1 = SELF INDUCTANCE OF
R4 + LLOOP
R1
+V1
0
t2
t1
Q1
R2
0
-V2
t3
Q3
R3
+V3
Q2
t1 5tA(MAX)
t2 > tRR
t3 > 0
L1 tA(MIN)
R4 10
LLOOP
DUT
Q4
C1
-V4
R4
dIF
IF dt
0
tRR
tA tB
0.25 IRM
IRM
VR
VRM
FIGURE 1. tRR TEST CIRCUIT
FIGURE 2. tRR WAVEFORMS AND DEFINITIONS
2




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RHRG7570 diode

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75A/ 700V - 1000V Hyperfast Diodes - Intersil Corporation