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RHRD660S 반도체 회로 부품 판매점

6A/ 600V Hyperfast Diodes



Fairchild Semiconductor 로고
Fairchild Semiconductor
RHRD660S 데이터시트, 핀배열, 회로
Data Sheet
RHRD660, RHRD660S
January 2002
6A, 600V Hyperfast Diodes
The RHRD660 and RHRD660S are hyperfast diodes with
soft recovery characteristics (trr < 30ns). They have half the
recovery time of ultrafast diodes and are silicon nitride
passivated ion-implanted epitaxial planar construction.
These devices are intended for use as freewheeling/
clamping diodes and rectifiers in a variety of switching power
supplies and other power switching applications. Their low
stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits
reducing power loss in the switching transistors.
Formerly developmental type TA49057.
Ordering Information
PART NUMBER
PACKAGE
BRAND
RHRD660
TO-251
RHR660
RHRD660S
TO-252
RHR660
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-252 variant in tape and reel, e.g. RHRD660S9A.
Symbol
K
A
Features
• Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . . <30ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175oC
• Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . . . . 600V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Packaging
JEDEC STYLE TO-251
ANODE
CATHODE
CATHODE
(FLANGE)
JEDEC STYLE TO-252
CATHODE
ANODE
CATHODE
(FLANGE)
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
RHRD660, RHRD660S
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VR
Average Rectified Forward Current
(TC = 152oC)
.....................................................
IF(AV)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM
(Square Wave, 20kHz)
600
600
600
6
12
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM
(Halfwave, 1 Phase, 60Hz)
60
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ
Maximum Lead Temperature for Soldering
50
10
-65 to 175
(Leads at 0.063 in. (1.6mm) from case for 10s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TPKG
300
260
UNITS
V
V
V
A
A
A
W
mJ
oC
oC
oC
©2002 Fairchild Semiconductor Corporation
RHRD660, RHRD660S Rev. B


RHRD660S 데이터시트, 핀배열, 회로
RHRD660, RHRD660S
Electrical Specifications TC = 25oC, Unless Otherwise Specified
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNITS
VF IF = 6A
IF = 6A, TC = 150oC
- - 2.1 V
- - 1.7 V
IR VR = 600V
VR = 600V, TC = 150oC
-
-
- 100
- 500
µA
µA
trr IF = 1A, dIF/dt = 200A/µs
-
- 30
ns
IF = 6A, dIF/dt = 200A/µs
-
- 35
ns
ta IF = 6A, dIF/dt = 200A/µs
-
16
-
ns
tb IF = 6A, dIF/dt = 200A/µs
-
8.5
-
ns
QRR
IF = 6A, dIF/dt = 200A/µs
-
45
-
nC
CJ
RθJC
VR = 10V, IF = 0A
- 20 -
pF
- - 3 oC/W
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%).
IR = Instantaneous reverse current.
trr = Reverse recovery time (See Figure 9), summation of ta + tb.
ta = Time to reach peak reverse current (See Figure 9).
tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9).
QRR = Reverse recovery charge.
CJ = Junction capacitance.
RθJC = Thermal resistance junction to case.
pw = Pulse width.
D = Duty cycle.
Typical Performance Curves
30 1000
175oC
100
10
10 100oC
175oC 100oC 25oC
1
0.5
0
0.5 1 1.5 2 2.5
VF, FORWARD VOLTAGE (V)
3
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
1
0.1 25oC
0.01
0
100 200 300 400 500
VR, REVERSE VOLTAGE (V)
FIGURE 2. REVERSE CURRENT vs REVERSE
600
©2002 Fairchild Semiconductor Corporation
RHRD660, RHRD660S Rev. B




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