RLS-73 반도체 회로 부품 판매점
Switching diode
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 ROHM Semiconductor |
Diodes
Switching diode
RLS-73
!Applications
High speed switching
!Features
1) Small surface mounting type. ( LLDS )
2) High speed. (trr=1.2ns Typ.)
3) High reliability.
!Construction
Silicon epitaxial planar
RLS-73
!External dimensions (Units : mm)
CATHODE BAND (YELLOW)
0.4 0.4
ROHM : LLDS
EIAJ : −
JEDEC : LL-34
3.4
+0.2
−0.1
φ1.5Max.
!Absolute maximum ratings (Ta=25°C)
Paramater
Peak reverse voltage
DC reverse voltage
Peak forward current
Mean rectifying current
Surge current (1s)
Power dissipation
Junction temperature
Storage temperature
Symbol
VRM
VR
IFM
IO
Isurge
P
Tj
Tstg
Limits
90
80
400
130
600
300
175
−65∼+175
Unit
V
V
mA
mA
mA
mW
˚C
˚C
!Electrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Forward voltage
VF − − 1.2 V IF=100mA
Reverse current
IR − − 0.5 µA VR=80V
Capacitance between terminals
CT
− − 2 pF VR=0.5V, f=1MHz
Reverse recovery time
trr − − 4 ns VR=6V, IF=10mA, RL=50Ω
Diodes
!Electrical characteristic curves (Ta=25°C)
100 1m
50
0.1m
20
10 10µ
5 1µ
2
100n
1
0.5 10n
Ta=125˚C
Ta=75˚C
Ta=−25˚C
0.2
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
FORWARD VOLTAGE : VF (V)
Fig. 1 Forward characteristics
1n
0 20 40 60 80 100 120 140
REVERSE VOLTAGE : VR (V)
Fig. 2 Reverse characteristics
RLS-73
3.0
f=1MHz
2.5
2.0
1.5
1.0
0.5
0
0 5 10 15 20 25 30
REVERSE VOLTAGE : VR (V)
Fig. 3 Capacitance between
terminals characteristics
5
VR = 6V
Irr = 1/10IR
4
3
2
1
0
0 4 8 12 16 20
FORWARD CURRENT : IF (mA)
Fig. 4 Reverse recovery time
characteristcs
10
PULSE
5 Single pulse
2
1
0.5
0.2
0.1
0.01
0.1 1 10 100
PULSE WIDTH : Tw (ms)
1000
Fig.5 Surge current characteristics
0.01µF
D.U.T.
5kΩ
PULSE GENERATOR
OUTPUT 50Ω
50Ω
SAMPLING
OSCILLOSCOPE
Fig.6 Reverse recovery time (trr) measurement circuit
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PDF 파일 내의 페이지 : 총 2 페이지
제조업체: ROHM Semiconductor
( rohm )
RLS-73 diode
데이터시트 다운로드 :
[ RLS-73.PDF ]
[ RLS-73 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
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