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PDF ZHCS756 Data sheet ( Hoja de datos )
| Número de pieza | ZHCS756 | |
| Descripción | SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE SuperBAT | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de ZHCS756 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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SOT23 SILICON HIGH CURRENT
SCHOTTKY BARRIER DIODE “SuperBAT”
ISSUE 1- NOVEMBER 1997
FEATURES:
• Low VF
• High Current Capability
7
1
APPLICATIONS:
• DC - DC converters
• Mobile telecomms
• PCMCIA
PARTMARK DETAIL: S76
3
ZHCS7 5 6
C
2
1
A
3
SOT2 3
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Continuous Reverse Voltage
Forward Current (Continuous)
Forward Voltage @ IF = 750mA
Average Peak Forward Current; D.C. = 50%
Non Repetitive Forward Current t≤100µs
t≤1 0 ms
Power Dissipation at Tamb= 25° C
Storage Temperature Range
Junction Temperature
SYMBOL
VR
IF
VF
IFAV
IFSM
Ptot
Tstg
Tj
VALUE
60
750
610
1500
12
5
500
-55 to + 150
125
UNIT
V
mA
mV
mA
A
A
mW
°C
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25° C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Reverse Breakdown V(BR)R
Voltage
60 80
V IR= 300µA
Forward Voltage
VF
Reverse Current
IR
250 290 mV IF= 50mA*
285 330 mV IF= 100mA*
350 410 mV IF= 250mA*
440 500 mV IF= 500mA*
520 610 mV IF= 750mA*
600 700 mV IF= 1000mA*
760 900 mV IF= 1500mA*
50 100 µA VR= 45V
Diode Capacitance CD
17 pF f= 1MHz,VR= 25V
Reverse Recovery
Time
trr
12 ns switched from
IF = 500mA to IR = 500mA
Measured at IR = 50mA
*Measured under pulsed conditions. Pulse width= 300µs; duty cycle ≤2% .
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet ZHCS756.PDF ] | |
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