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Zetex Semiconductors |
SOT23 SILICON HIGH CURRENT
SCHOTTKY BARRIER DIODE “SuperBAT”
ZHCS7 5 0
ISSUE 2 - October 1997
7
FEATURES:
* Low VF
* High Current Capability
APPLICATIONS:
* DC - DC converters
* Mobile telecomms
* PCMCIA
PARTMARK DETAIL: ZS7
ABSOLUTE MAXIMUM RATINGS.
1
C
1
2
A
3
3
SOT2 3
PARAMETER
SYMBOL
VALUE
UNIT
Continuous Reverse Voltage
Forward Current (Continuous)
Forward Voltage @ IF = 750mA
Average Peak Forward Current; D.C. = 50%
Non Repetitive Forward Current t≤100µs
t≤1 0 ms
Power Dissipation at Tamb= 25° C
Storage Temperature Range
Junction Temperature
VR
IF
VF
IFAV
IFSM
Ptot
Tstg
Tj
40
750
490
1500
12
5.2
500
-55 to + 150
125
V
mA
mV
mA
A
A
mW
°C
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25° C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Reverse Breakdown V(BR)R
Voltage
40 60
V IR= 300µA
Forward Voltage
VF
Reverse Current
IR
225 280 mV IF= 50mA*
235 310 mV IF= 100mA*
290 350 mV IF= 250mA*
340 420 mV IF= 500mA*
390 490 mV IF= 750mA*
440 540 mV IF= 1000mA*
530 650 mV IF= 1500mA*
50 100 µA VR= 30V
Diode Capacitance CD
25 pF f= 1MHz,VR= 25V
Reverse Recovery
Time
trr
12 ns switched from
IF = 500mA to IR = 500mA
Measured at IR = 50mA
*Measured under pulsed conditions. Pulse width= 300µs; duty cycle ≤2% .
ZHCS7 5 0
TYPICAL CHARACTERISTICS
10
1
0.1
0.01
0
+125°C
+25°C
-55°C
0.2 0.4 0.6
VF - Forward Voltage (V)
IF v VF
0.8
100m
10m
1m
+125°C
+100°C
Typical
100µ
10µ
+50°C
+25°C
1µ
100n
10n
0
-55°C
10 20
VR - Reverse Voltage (V)
IR v VR
30
1.2
Typical
DC
0.8
D=0.5
D=0.2
0.4
D=0.1
D=0.05
t1 D=t1/tp
I
F(pk)
tp
I F(av)=D x I
F(pk)
0
75 85 95 105 115 125
TC - Case Temperature (°C)
IF(av) v TC
0.5
Typical
Tj=125°C
0.4
0.3
0.2
t1 D=t1/tp
I
F(pk)
0.1
0
0
DC
D=0.5
D=0.2
D=0.1
D=0.05
tp
I F(av)=D x I
F(pk)
PF(av)=I F(av) x VF
0.4 0.8 1.2
IF(av) Average Forward Current (A)
PF(av) v IF(av)
125
100
Typical
Rth=100° C/W
Rth=200°C/W
Rth=300° C/W
200
100
75
1
10 100
VR - Reverse Voltage (V)
Ta v VR
0
0 10 20 30
VR - Reverse Voltage (V)
CD v VR
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