|
Zetex Semiconductors |
SOT23 SILICON HIGH CURRENT
SCHOTTKY BARRIER DIODE “SuperBAT”
ZHCS5 0 6
ISSUE 1 - September 1997
FEATURES:
• Low VF
• High Current Capability
APPLICATIONS:
• DC - DC converters
• Mobile telecomms
• PCMCIA
PARTMARK DETAIL: S56
7
ABSOLUTE MAXIMUM RATINGS.
1
C
1
2
A
3
3
SOT2 3
PARAMETER
SYMBOL
VALUE
UNIT
Continuous Reverse Voltage
Forward Current (Continuous)
Forward Voltage @ IF = 500mA
Average Peak Forward Current; D.C. = 50%
Non Repetitive Forward Current t≤100µs
t≤1 0 ms
Power Dissipation at Tamb= 25° C
Storage Temperature Range
Junction Temperature
VR
IF
VF
IFAV
IFSM
Ptot
Tstg
Tj
60
500
630
1000
5.5
2.5
330
-55 to + 150
125
V
mA
mV
mA
A
A
mW
°C
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25° C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Reverse Breakdown V(BR)R
Voltage
60 80
V IR= 200µA
Forward Voltage
VF
Reverse Current
IR
275
320
415
550
680
820
1120
565
20
310
360
470
630
800
960
1350
40
mV
mV
mV
mV
mV
mV
mV
mV
µA
IF= 50mA*
IF= 100mA*
IF= 250mA*
IF= 500mA*
IF= 750mA*
IF= 1000mA*
IF= 1500mA*
IF= 500mA, Tamb= 100° C*
VR= 45V
Diode Capacitance CD
20 pF f= 1MHz,VR= 25V
Reverse Recovery
Time
trr
10 ns switched from
IF = 500mA to IR = 500mA
Measured at IR = 50mA
*Measured under pulsed conditions. Pulse width= 300µs; duty cycle ≤2% .
ZHCS5 0 6
1
100m
10m
+125°C
+25°C
-55°C
1m
0
0.1 0.2 0.3 0.4 0.5
VF - Forward Voltage (V)
IF v VF
0.6
0.6
D=0.5
0.4
D=0.2
D=0.1
0.2
D=0.05
DC
t
1
D=t 1/t p
I F(pk)
t
p
I F(av) =DxI F(pk)
PF(av) =I F(av) xV F
0
75 85 95 105 115 125
TC - Case Temperature (°C)
IF(av) v TC
125
95
Rth=100°C/W
Rth=200°C/W
Rth=300°C/W
10m
+125°C
1m
100u
+100°C
10u
1u
+50°C
+25°C
100n
-55°C
10n
0
10 20 30 40 50
VR - Reverse Voltage (V)
IR v VR
60
0.4
Tj=125°C
0.3
0.2
0.1
0
0
0.1
0.2
DC
D=0.5
D=0.2
D=0.1
D=0.05
0.3 0.4
t
1 D=t 1/t p
I F(pk)
t
p
I F(av) =DxI F(pk)
PF(av) =I F(av) xV F
0.5 0.6
IF(av) - Avg Fwd Curr (A)
PF(av) v IF(av)
90
50
65
1
10 100
VR - Reverse Voltage (V)
Ta v VR
0
0 10 20 30 40 50 60
VR - Reverse Voltage (V)
CD v VR
|