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Zetex Semiconductors |
ZHCS2000
40V SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE
SUMMARY
VR=40V; IC= 2A
DESCRIPTION
A surface mount Schottky Barrier Diode featuring low forward voltage drop
suitable for high frequency rectification and reverse voltage protection.
FEATURES
• High current capability
• Low forward voltage (VFmax=0.5V)
• Fast recovery time
• Small package size
APPLICATIONS
• Mobile telecomms, PCMIA & SCSI
• DC-DC Conversion
• High frequency rectification
ORDERING INFORMATION
DEVICE
REEL SIZE
(inches)
TAPE WIDTH
(mm)
QUANTITY
PER REEL
ZHCS2000TA
7 8mm embossed 3000 units
ZHCS2000TC
13 8mm embossed 10000 units
DEVICE MARKING
ZS2
SOT23-6
Top View
ISSUE 1 - DECEMBER 2000
1
ZHCS2000
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Continuous Reverse Voltage
Forward Current
Average Peak Forward Current;D.C.=50%
Non Repetitive Forward Current t≤100µs
t≤10ms
Power Dissipation at Tamb=25°C
Storage Temperature Range
Junction Temperature
THERMAL RESISTANCE
PARAMETER
SYMBOL
VR
IF
IFAV
IFSM
Ptot
Tstg
Tj
SYMBOL
VALUE
40
2
4
20
10
1.1
-55 to +150
125
VALUE
UNIT
V
A
A
A
A
W
°C
°C
UNIT
Junction to Ambient (a)
Junction to Ambient (b)
RθJA
RθJA
113 °C/W
73 °C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at tр5 secs.
ISSUE 1 - DECEMBER 2000
2
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