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PDF ZHCS1006 Data sheet ( Hoja de datos )
| Número de pieza | ZHCS1006 | |
| Descripción | SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE SuperBAT | |
| Fabricantes | Zetex Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de ZHCS1006 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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SOT23 SILICON HIGH CURRENT
SCHOTTKY BARRIER DIODE ”SuperBAT”
ISSUE 1 - NOVEMBER 1997 7
FEATURES:
• High current capability
• Low VF
APPLICATIONS:
• Mobile telecomms, PCMIA & SCSI
• DC-DC Conversion
PARTMARKING DETAILS : S16
1
ABSOLUTE MAXIMUM RATINGS.
3
ZHCS1 0 0 6
C
2
1
A
3
SOT2 3
PARAMETER
SYMBOL
VALUE
UNIT
Continuous Reverse Voltage
Forward Current
Forward Voltage @ IF = 1000mA(typ)
Average Peak Forward Current;D.C.= 50%
Non Repetitive Forward Current t≤100µs
t≤1 0 ms
Power Dissipation at Tamb= 25° C
Storage Temperature Range
Junction Temperature
VR
IF
VF
IFAV
IFSM
Ptot
Tstg
Tj
60
900
600
1600
12
5
500
-55 to + 150
125
V
mA
mV
mA
A
A
mW
°C
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25° C unless otherwise stated).
PARAMETER
SYMBOL
MIN. TYP. MAX. UNIT CONDITIONS.
Reverse Breakdown
Voltage
V (BR)R
60 80
V IR= 300µA
Forward Voltage
VF
Reverse Current
IR
245 280 mV
275 320 mV
330 390 mV
395 470 mV
455 530 mV
510 600 mV
620 740 mV
50 100 µA
IF= 50mA*
IF= 100mA*
IF= 250mA*
IF= 500mA*
IF= 750mA*
IF= 1000mA*
IF= 1500mA*
VR= 45V
Diode Capacitance
CD
17 pF f= 1MHz,VR= 25V
Reverse Recovery
Time
trr
12 ns switched from
IF = 500mA to IR =
500mA
Measured at IR = 50mA
*Measured under pulsed conditions. Pulse width= 300µs. Duty cycle ≤2%
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet ZHCS1006.PDF ] | |
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