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Zetex Semiconductors |
SOT23 SILICON HIGH CURRENT
SCHOTTKY BARRIER DIODE ”SuperBAT”
ISSUE 2 - OCTOBER 1997 7
FEATURES:
• High current capability
• Low VF
APPLICATIONS:
• Mobile telecomms, PCMIA & SCSI
• DC-DC Conversion
PARTMARKING DETAILS : ZS1
1
ABSOLUTE MAXIMUM RATINGS.
3
ZHCS1 0 0 0
C
2
1
A
3
SOT2 3
PARAMETER
SYMBOL
VALUE
UNIT
Continuous Reverse Voltage
Forward Current
Forward Voltage @ IF = 1000mA(typ)
Average Peak Forward Current;D.C.= 50%
Non Repetitive Forward Current t≤100µs
t≤1 0 ms
Power Dissipation at Tamb= 25° C
Storage Temperature Range
Junction Temperature
VR
IF
VF
IFAV
IFSM
Ptot
Tstg
Tj
40
1000
425
1750
12
5.2
500
-55 to + 150
125
V
mA
mV
mA
A
A
mW
°C
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25° C unless otherwise stated).
PARAMETER
SYMBOL
MIN. TYP. MAX. UNIT CONDITIONS.
Reverse Breakdown
Voltage
V (BR)R
40 60
V IR= 300µA
Forward Voltage
VF
240 270 mV
265 290 mV
305 340 mV
355 400 mV
390 450 mV
425 500 mV
495 600 mV
420 —
mV
IF= 50mA*
IF= 100mA*
IF= 250mA*
IF= 500mA*
IF= 750mA*
IF= 1000mA*
IF= 1500mA*
IF= 1000mA,Ta= 100° C
*
Reverse Current
IR
50 100 µA VR= 30V
Diode Capacitance
CD
25 pF f= 1MHz,VR= 25V
Reverse Recovery
Time
trr
12 ns switched from
IF = 500mA to IR =
500mA
Measured at IR = 50mA
*Measured under pulsed conditions. Pulse width= 300µs. Duty cycle ≤2%
ZHCS1 0 0 0
TYPICAL CHARACTERISTICS
10
1
100m
10m
1m
0
+125°C
+25°C
-55°C
0.1 0.2 0.3 0.4 0.5
VF - Forward Voltage (V)
IF v VF
0.6
0.8
Typical
DC
0.6
D=0.5
D=0.2
0.4
D=0.1
0.2
D=0.05
t1 D=t1/tp
I
F(pk)
tp
I F(av)=D x I
F(pk)
0
75 85 95 105 115 125
TC - Case Temperature (°C)
IF(av) v TC
125
Typical
100m
10m
1m
100u
10u
1u
+125°C
+100°C
+50° C
+25°C
100n
10n
0
-55° C
10 20
VR - Reverse Voltage (V)
IR v VR
30
0.6
Typical
Tj=125°C
0.4
0.2
0
0
t1 D=t1/tp
I
F(pk)
0.4
DC
D=0.5
D=0.2
D=0.1
D=0.05
0.8
tp
=D x
I F(av)I
F(pk)
x
PF(av)=I F(av) V F
1.2
IF(av) - Avg Fwd Curr (A)
PF(av) v IF(av)
200
100
Rth=100° C/W
Rth=200° C/W
Rth=300° C/W
100
75
1
10 100
VR - Reverse Voltage (V)
Ta v VR
0
0 10 20 30
VR - Reverse Voltage (V)
CD v VR
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