ZC933TA 반도체 회로 부품 판매점
SILICON 12V HYPERABRUPT VARACTOR DIODES
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 Zetex Semiconductors |
ZC930, ZMV930, ZV931 series
SILICON 12V HYPERABRUPT VARACTOR DIODES
Device Description
A range of silicon varactor diodes for use in frequency control and
filtering. Featuring closely controlled CV characteristics and high Q. Low
reverse current ensures very low phase noise performance. Available in
single or dual common cathode format in a wide rage of miniature
surface mount packages.
Features
· Close tolerance C-V characteristics
· Octave tuning from 0 to 6V
· Low IR (typically 200pA)
· Excellent phase noise performance
· High Q
· Range of miniature surface mount packages
Applications
· VCXO and TCXO
· Wireless communications
· Pagers
· Mobile radio
ISSUE 6 - JANUARY 2002
1
ZC930, ZMV930, ZV931 series
TUNING CHARACTERISTICS at Tamb = 25°C
PART
Capacitance
VR=1V
Capacitance
VR=2.5V
930
931
932
933
933A
934
934A
MIN pF
8.70
13.50
17.00
42.00
42.00
95.00
95.00
MIN pF
4.30
6.50
8.50
18.00
20.25
40.00
47.25
MAX pF
5.50
7.80
10.50
27.00
24.75
65.00
57.75
Capacitance
VR=4V
MAX pF
2.90
4.00
5.50
12.00
12.00
25.00
25.00
Minimum Q
VR=4V
f=50MHz
200
300
200
150
150
80
80
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Reverse voltage
Forward current
Power dissipation at Tamb = 25ЊC SOT23
Power dissipation at Tamb = 25ЊC SOD323
Power dissipation at Tamb = 25ЊC SOD523
Operating and storage temperature range
SYMBOL
VR
IF
Ptot
Ptot
Ptot
MAX
12
100
330
330
250
-55 to +150
UNIT
V
mA
mW
mW
mW
ЊC
ELECTRICAL CHARACTERISTICS at Tamb = 25°C
PARAMETER
Reverse breakdown voltage
Reverse voltage leakage
Temperature coefficient of capacitance
CONDITIONS
IR = 10uA
VR = 8V
VR = 3V, f = 1MHz
MIN.
12
TYP.
0.2
300
MAX.
100
400
UNIT
V
nA
ppCm/ЊC
ISSUE 6 - JANUARY 2002
2
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PDF 파일 내의 페이지 : 총 6 페이지
제조업체: Zetex Semiconductors
( zetexs )
ZC933TA diode
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
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IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
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