파트넘버.co.kr YG906C2R 데이터시트 PDF


YG906C2R 반도체 회로 부품 판매점

LOW LOSS SUPER HIGH SPEED DIODE



Fuji Electric 로고
Fuji Electric
YG906C2R 데이터시트, 핀배열, 회로
YG906C2R L L D (200V / 20A TO-22OF15)
LOW LOSS SUPER HIGH SPEED DIODE
Outline Drawings
10±0.5
+0.2
ø3.2 -0.1
4.5±0.2
2.7±0.2
Features
Low VF
Super high speed switching.
High reliability by planer design.
1.2±0.2
0.7±0.2
2.54±0.2
+0.2
0.6 -0
2.7±0.2
Applications
High speed power switching.
JEDEC
EIAJ
SC-67
Connection Diagram
2
Maximum Ratings and Characteristics
Absolute Maximum Ratings
1
3
Item
Symbol
Conditions
Rating
Unit
Repetitive peak reverse voltage
Repetitive peak surge reverse voltage
Isolation voltage
Average output current
Surge current
VRRM
VRSM
Viso
IO
IFSM
tw=500ns,duty=1/40
Terminals to Case,
AC. 1min.
duty=1/2, Tc=102°C
Square wave
Sine wave 10ms
200
200
1500
20*
80
V
V
V
A
A
Operating junction temperature
Tj
-40 to +150
°C
Storage temperature
Tstg
Electrical Characteristics (Ta=25°C Unless otherwise specified )
-40 to +150
°C
* Out put current of centertap full wave connection.
Item
Symbol
Conditions
Max.
Unit
Forward voltage drop **
VF IF=10A
0.98 V
Reverse current **
IR VR=VRRM
200 µA
Reverse recovery time
trr
IF=0.1A,IR=0.2A,Irec=0.05A
40
ns
Thermal resistance
Mechanical Characteristics
Rth(j-c)
Junction to case
2.5 °C/W
** Rating per element
Mounting torque
Weight
Recommended torque
0.3 to 0.5
2.3
N·m
g


YG906C2R 데이터시트, 핀배열, 회로
LLD ( 200V / 20A TO-220F15)
YG906C2R (20A)
Characteristics
Forward Characteristic (typ.)
100
10
Tj=150 oC
Tj=125 oC
1 Tj=100 oC
Tj=25 oC
0.1
0.01
0.0
0.2 0.4 0.6 0.8 1.0 1.2
V F Forward Voltage (V)
Reverse Characteristic (typ.)
104
Tj=150 oC
Tj=125 oC
103
Tj=100 oC
102
101
Tj= 25 oC
100
10-1
0
50 100 150 200 250
V R Reverse Voltage (V)
Forward Power Dissipation
14
Io
12
λ
360°
10
Square wave λ=60o
8 Square wave λ=120o
6 Sine wave λ=180o
Square wave λ=180o
4 DC
2
Per 1element
0
0 1 2 3 4 5 6 7 8 9 10
I o Average Forward Current (A)
Reverse Power Dissipation
2.0
1.8 360°
1.6 VR
DC
1.4
α
1.2
1.0
α=180 o
0.8
0.6
0.4
0.2
0.0
0 25 50 75 100 125 150 175 200 225
V R Reverse Voltage (V)
Current Derating (Io-Tc)
160
Junction Capacitance Characteristic (typ.)
100
150
140
130
120
110
100
90
80
360°
λ
Io
VR=200V
DC
Sine waveλ=180o
Square waveλ=180o
Square waveλ=120o
Square waveλ=60o
70
0 5 10 15 20 25 30
I o Average Output Current (A)
λ:Conduction angle of forward current for each rectifier eleme
Io:Output current of center-tap full wave connection
10
1
1
10 100
V R Reverse Voltage (V)




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YG906C2R diode

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