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YG802C06R 반도체 회로 부품 판매점

SCHOTTKY BARRIER DIODE



Fuji Electric 로고
Fuji Electric
YG802C06R 데이터시트, 핀배열, 회로
YG802C06R
SCHOTTKY BARRIER DIODE
(60V / 10A TO-22OF15)
Outline Drawings
10±0.5
+0.2
ø3.2 -0.1
4.5±0.2
2.7±0.2
Features
Low VF
Super high speed switching.
High reliability by planer design.
Applications
High speed power switching.
Maximum Ratings and Characteristics
Absolute Maximum Ratings
1.2±0.2
0.7±0.2
2.54±0.2
+0.2
0.6 -0
2.7±0.2
JEDEC
EIAJ
SC-67
Connection Diagram
2
13
Item
Symbol
Conditions
Rating
Unit
Repetitive peak reverse voltage
VRRM
60 V
Repetitive peak surge reverse voltage
Isolation voltage
Average output current
Surge current
VRSM
Viso
IO
IFSM
tw=500ns, duty=1/40
Terminals to Case,
AC. 1min.
duty=1/2, Tc=118°C
Square wave
Sine wave 10ms
60
1500
10*
80
V
V
A
A
Operating junction temperature
Tj
-40 to +150
°C
Storage temperature
Tstg
Electrical Characteristics (Ta=25°C Unless otherwise specified )
-40 to +150
°C
* Out put current of centertap full wave connection.
Item
Symbol
Conditions
Max.
Unit
Forward voltage drop **
VF IF=4.0A
0.58 V
Reverse current **
IR VR=VRRM
5.0 mA
Thermal resistance
Mechanical Characteristics
Rth(j-c)
Junction to case
3.5 °C/W
** Rating per element
Mounting torque
Weight
Recommended torque
0.3 to 0.5
2.3
N·m
g


YG802C06R 데이터시트, 핀배열, 회로
(60V / 10A TO-22OF15)
Characteristics
Forward Characteristic (typ.)
100
10
Tj=150 oC
Tj=125 oC
Tj=100 oC
Tj=25 oC
1
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VF Forward Voltage (V)
Forward Power Dissipation
6.0
5.5 Io
5.0
λ
4.5 360°
4.0
3.5 Square wave λ=60 o
3.0 Square wave λ=120 o
Sine wave λ=180 o
2.5 Square wave λ=180 o
DC
2.0
1.5
1.0
0.5
0.0
0
Per 1element
12345
Io Average Forward Current (A)
Current Derating (Io-Tc)
160
150
140
130 DC
120 Sine wave λ=180 o
Square wave λ=180 o
110 Square wave λ=120 o
100
90
80
70
360°
λ
Io
VR=30V
Square wave λ=60 o
60
0 2 4 6 8 10 12
Io Average Output Current (A)
λ:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
14
YG802C06R
Reverse Characteristic (typ.)
10 2
10 1
10 0
Tj=150 oC
Tj=125 oC
Tj=100 oC
10 -1
10 -2
Tj=25 oC
10 -3
0
10 20 30 40 50 60 70
VR Reverse Voltage (V)
Reverse Power Dissipation
14
360°
12
VR
10
α
8
DC
6
α=180 o
4
2
0
0 10 20 30 40 50 60 70
VR Reverse Voltage (V)
Junction Capacitance Characteristic
(typ.)
1000
100
10
10
100
VR Reverse Voltage (V)




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YG802C06R diode

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