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Sanyo Semicon Device |
Ordering number:EN2198A
SB0015-03A
Schottky Barrier Diode
30V, 15mA Detection Applications
Features
· Glass sleeve structure.
· Detection efficiency : 70%.
· Small size (Half the size of the DO-35 heretofore in
use)
Package Dimensions
unit:mm
1153A
[SB0015-03A]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Reverse Voltage
Average Rectified Current
Junction Temperature
Storage Temperature
Symbol
VR
IO
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Forward Current
Reverse Current
Capacitance
Detection Efficiency
Symbol
IF VF=1.0V
IR VR=10V
C VR=1V, f=1MHz
η f=40MHz
Conditions
Detection Efficiency Circuit
C:Cathode
A:Anode
Ratings
30
15
100
–55 to +100
Unit
V
mA
˚C
˚C
Ratings
min typ
3.0
70
max
100
3.0
Unit
mA
µA
pF
%
Unit (resistance : Ω, capacitance : F)
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62098HA (KT)/1129TA, TS No.2198-1/3
SB0015-03A
No.2198-2/3
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