파트넘버.co.kr KDV240 데이터시트 PDF


KDV240 반도체 회로 부품 판매점

VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF RADIO)



KEC(Korea Electronics) 로고
KEC(Korea Electronics)
KDV240 데이터시트, 핀배열, 회로
SEMICONDUCTOR
TECHNICAL DATA
VCO FOR UHF Band Radio.
FEATURES
High Capacitance Ratio : C1V/C4V =2.1(Typ.)
Low Series Resistance : rs=0.28 (Typ.)
Useful for Small Size Tuner.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
Junction Temperature
Storage Temperature Range
VR
Tj
Tstg
RATING
10
150
-55 150
UNIT
V
KDV240
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
B
1
G
H
2
D
MM
1. ANODE
2. CATHODE
J
C
I
DIM MILLIMETERS
A 2.50+_ 0.1
B 1.25+_ 0.05
C 0.90+_ 0.05
D 0.30+0.06/-0.04
E 1.70+_ 0.05
F MIN 0.17
G 0.126+_ 0.03
H 0~0.1
I 1.0 MAX
J 0.15+_ 0.05
K 0.4+_ 0.05
L 2 +4/-2
M 4~6
USC
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
Reverse Current
Capacitance
VR
IR
C1V
C4V
Capacitance Ratio
K
Series Resistance
rS
TEST CONDITION
IR=1 A
VR=10V
VR=1V, f=1MHz
VR=4V, f=1MHz
C1V/C4V, f=1MHz
VR=1V, f=470MHz
MIN.
10
-
9.7
4.45
1.8
-
TYP.
-
-
-
-
2.1
0.28
MAX.
-
3
11.1
5.45
-
0.4
UNIT
V
nA
pF
Marking
Type Name
EC
2003. 1. 27
Revision No : 0
1/2


KDV240 데이터시트, 핀배열, 회로
KDV240
C T - VR
100
f=1MHz
50 Ta=25 C
30
10
5
3
1
01 2 34 5 6
REVERSE VOLTAGE VR (V)
0.4
0.3
0.2
0.1
0
0.1
rs - VR
f=470MHz
Ta=25 C
0.3 0.5 1
35
REVERSE VOLTAGE VR (V)
10
2003. 1. 27
Revision No : 0
2/2




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KDV240 diode

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