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KEC(Korea Electronics) |
SEMICONDUCTOR
TECHNICAL DATA
For high speed switching circuit.
For small current rectification.
FEATURES
Low Forward Voltage : VF max=0.55V.
IO=200mA recification possible.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Repetitive Peak Reverse Voltage
Reverse Voltage
Average Forward Current
Non-repetitive peak surge current
Junction Temperature
Storage Temperature
SYMBOL
VRRM
VR
IO
IFSM
Tj
Tstg
RATING
30
30
0.2
1
125
-55 125
UNIT
V
V
A
A
KDR721S
SCHOTTKY BARRIER TYPE DIODE
(CATHODE COMMAND)
E
L BL
23
1
PP
M
1. ANODE 1
2. ANODE 2
3. CATHODE
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
2.93+_ 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
3
21
SOT-23
Marking
MFType Name
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
Forward Voltage
Reverse Current
Total Capacitance
VR
VF
IR
CT
Reverse Recovery Time
trr
TEST CONDITION
IR=1mA
IF=0.2A
VR=30V
VR=10V, f=1MHz
IR=IF=10mA
MIN.
30
-
-
-
-
TYP.
-
-
-
13
3
MAX.
-
0.55
50
-
-
UNIT
V
V
A
pF
nS
2003. 2. 25
Revision No : 1
1/2
KDR721S
10 2
Ta=25 C
IR - VR
10
1
-1
10
0
5 10 15 20 25
REVERSE VOLTAGE VR (V)
30
10 3 Ta=25 C
10 2
10
I F - VF
1
10 -1
10 -2
0
0.1 0.2 0.3 0.4
FORWARD VOLTAGE VF (V)
0.5
10 5
VR =30V
10 4
10 3
I R - Ta
10 2
10
1
-40
0 40 80 120 160
AMBIENT TEMPERATURE Ta ( C)
200
0.6
IF =200mA
0.5
VF - Ta
0.4
0.3
0.2
-40
0 40 80 120 160
AMBIENT TEMPERATURE Ta ( C)
200
60
50
40
30
20
10
0
0
C T - VR
5 10 15 20 25
REVERSE VOLTAGE VR (V)
30
2003. 2. 25
Revision No : 1
2/2
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