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PDF KDR367 Data sheet ( Hoja de datos )
| Número de pieza | KDR367 | |
| Descripción | SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING) | |
| Fabricantes | KEC(Korea Electronics) | |
| Logotipo | .gif "KEC(Korea Electronics)"){kind=logo} |
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Hay una vista previa y un enlace de descarga de KDR367 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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SEMICONDUCTOR
TECHNICAL DATA
LOW VOLTAGE HIGH SPEED SWITCHING.
FEATURES
Low Forward Voltage : VF(2)=0.23V (Typ.)
Small Package : USC.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Maximum (Peak) Reverse Voltage
VRM
15
Reverse Voltage
VR 10
Maximum (Peak) Forward Current
IFM 200
Average Forward Current
IO 100
Surge Current (10ms)
IFSM
1
Power Dissipation
PD 200*
Junction Temperature
Tj 125
Storage Temperature Range
Tstg -55 125
* : Mounted on a glass epoxy circuit board of 20 20mm,
pad dimension of 4 4mm.
UNIT
V
V
mA
mA
A
mW
KDR367
SCHOTTKY BARRIER TYPE DIODE
B
1
G
H
2
D
MM
1. ANODE
2. CATHODE
J
C
I
DIM MILLIMETERS
A 2.50 +_ 0.1
B 1.25+_ 0.05
C 0.90 +_0.05
D 0.30+0.06/-0.04
E 1.70 +_ 0.05
F MIN 0.17
G 0.126 +_ 0.03
H 0~0.1
I 1.0 MAX
J 0.15 +_0.05
K 0.4 +_0.05
L 2 +4/-2
M 4~6
USC
Marking
Type Name
US
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Forward Voltage
Reverse Current
VF(1)
VF(2)
VF(3)
IR
Total Capacitance
CT
TEST CONDITION
IF=1mA
IF=5mA
IF=100mA
VR=10V
VR=0V, f=1MHz
MIN.
-
-
-
-
-
TYP.
0.18
0.23
0.35
-
20
MAX.
-
0.30
0.50
20
40
UNIT
V
A
pF
2003. 2. 25
Revision No : 2
1/2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet KDR367.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| KDR367 | SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING) | KEC(Korea Electronics) |
| KDR367E | SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING) | KEC(Korea Electronics) |
| KDR367E | SCHOTTKY BARRIER TYPE DIODE |  KEC |
| KDR368 | SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING) | KEC(Korea Electronics) |
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