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NXP Semiconductors |
DISCRETE SEMICONDUCTORS
DATA SHEET
, halfpage
M3D121
BA682; BA683
Band-switching diodes
Product specification
Supersedes data of April 1992
1996 Mar 13
Philips Semiconductors
Band-switching diodes
Product specification
BA682; BA683
FEATURES
• Continuous reverse voltage:
max. 35 V
• Continuous forward current:
max. 100 mA
• Low diode capacitance:
max. 1.5 pF
• Low diode forward resistance:
max. 0.7 to 1.2 Ω.
APPLICATION
• Band-switching in VHF television
tuners.
DESCRIPTION
Planar high performance band-switching diodes in a glass SOD80
SMD package.
handbook, 4 columns
ka
MAM061
Fig.1 Simplified outline (SOD80) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VR continuous reverse voltage
IF continuous forward current
Tstg storage temperature
Tj junction temperature
MIN.
−
−
−65
−
MAX.
35
100
+150
150
UNIT
V
mA
°C
°C
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
VF forward voltage
IR reverse current
Cd diode capacitance
Cd diode capacitance
BA682
BA683
rD diode forward resistance
BA682
BA683
rD diode forward resistance
BA682
BA683
CONDITIONS
IF = 100 mA; see Fig.2
see Fig.3
VR = 20V
VR = 20 V; Tj = 75 °C
f = 1 MHz; VR = 1 V; see Fig.4
f = 1 MHz; VR = 3 V; see Fig.4
IF = 3 mA; f = 200 MHz; see Fig.5
IF = 10 mA; f = 200 MHz; see Fig.5
MAX. UNIT
1.0 V
50 nA
1 µA
1.5 pF
1.25 pF
1.20 pF
0.7 Ω
1.2 Ω
0.5 Ω
0.9 Ω
1996 Mar 13
2
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