파트넘버.co.kr BA679S 데이터시트 PDF


BA679S 반도체 회로 부품 판매점

Silicon PIN Diodes



Vishay Telefunken 로고
Vishay Telefunken
BA679S 데이터시트, 핀배열, 회로
www.vishay.com
BA679, BA679S
Vishay Semiconductors
RF PIN Diodes - Single in MiniMELF SOD-80
FEATURES
• Wide frequency range 10 MHz to 1 GHz
• AEC-Q101 qualified
• Material categorization:
For definitions of compliance please
www.vishay.com/doc?99912
see
APPLICATIONS
• Current controlled HF resistance in adjustable
attenuators
MECHANICAL DATA
Case: MiniMELF SOD-80
Weight: approx. 31 mg
Cathode band color: black
Packaging codes/options:
GS18/10K per 13" reel (8 mm tape), 10K/box
GS08/2.5K per 7" reel (8 mm tape), 12.5K/box
PARTS TABLE
PART
TYPE
DIFFERENTIATION
BA679
BA679S
zr > 5 k
zr > 9 k
ORDERING CODE
BA679-GS18 or BA679-GS08
BA679S-GS18 or BA679S-GS08
TYPE MARKING
-
-
INTERNAL
CONSTRUCTION
Single diode
Single diode
REMARKS
Tape and reel
Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PART
TEST CONDITION
SYMBOL
VALUE
Reverse voltage
Forward continuous current
VR 30
IF 50
UNIT
V
mA
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Thermal resistance junction to ambient air
on PC board
50 mm x 50 mm x 1.6 mm
RthJA
Junction temperature
Storage temperature range
Tj
Tstg
VALUE
500
125
- 55 to + 150
UNIT
K/W
°C
°C
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART SYMBOL MIN.
Forward voltage
Reverse current
Diode capacitance
Differential forward resistance
Reverse impedance
Minority carrier lifetime
IF = 20 mA
VR = 30 V
f = 100 MHz, VR = 0 V
f = 100 MHz, IF = 1.5 mA
f = 100 MHz, VR = 0 V
IF = 10 mA, IR = 10 mA
BA679
BA679S
VF
IR
CD
rf
zr
zr
5
9
TYP.
4
MAX.
1
0.05
0.5
50
UNIT
V
μA
pF
k
k
μs
Rev. 1.8, 16-May-12
1 Document Number: 85529
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


BA679S 데이터시트, 핀배열, 회로
www.vishay.com
BA679, BA679S
Vishay Semiconductors
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
100
10
Tamb = 25 °C
1
Scattering Limit
0.1
0.01
0
95 9735
0.4 0.8 1.2 1.6
VF - Forward Voltage (V)
2.0
Fig. 1 - Forward Current vs. Forward Voltage
10 000
1000
100
f > 20 MHz
Tj = 25 °C
10
1
0.001
95 9734
0.01 0.1
1
IF - Forward Current (mA)
10
Fig. 2 - Differential Forward Resistance vs. Forward Current
20
Π - Circuit with 10 dB Attenuation
0 V0 = 40 dBmV
f1 = 100 MHz unmodulated
- 20
- 40
- 60
- 80
0
20 40 60
80
95 9733 f2 , modulated with 200 kHz, m = 100 % (MHz)
Fig. 3 - Typ. Cross Modulation Distortion vs. Frequency f2
Rev. 1.8, 16-May-12
2 Document Number: 85529
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000




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BA679S diode

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