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Infineon Technologies AG |
Silicon RF Switching Diode
• For band switching in TV/VTR tuners
and mobile applications
• Very low forward resistance (typ. 0.45 Ω @ 3 mA)
• Small capacitance
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
BA592/BA892...
BA592
BA892/-02L
BA892-02V
Type
BA592
BA892
BA892-02L
BA892-02V
Package
SOD323
SCD80
TSLP-2-1
SC79
Configuration
single
single
single, leadless
single
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
Forward current
Junction temperature
Operating temperature range
Storage temperature
VR
IF
TJ
Top
TStg
LS(nH)
1.8
0.6
0.4
0.6
Marking
blue S
AA
AA
A
Value
35
100
150
-55 ... 125
-55 ... 150
Unit
V
mA
°C
1 2011-07-21
BA592/BA892...
Thermal Resistance
Parameter
Junction - soldering point1)
BA592
BA892, BA892-02V
BA892-02L
Symbol
RthJS
Value
≤ 135
≤ 120
≤ 70
Unit
K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Reverse current
VR = 20 V
Forward voltage
IF = 100 mA
IR - - 20
VF - - 1
1For calculation of RthJA please refer to Application Note Thermal Resistance
Unit
nA
V
2 2011-07-21
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