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E50A21VBS 반도체 회로 부품 판매점

STACK SILICON DIFFUSED DIODE (ALTERNATOR DIODE FOR AUTOMOTIVE)



KEC(Korea Electronics) 로고
KEC(Korea Electronics)
E50A21VBS 데이터시트, 핀배열, 회로
SEMICONDUCTOR
TECHNICAL DATA
ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION.
FEATURES
Average Forward Current : IO=50A.
Zener Voltage : 21V(Typ.)
POLARITY
E50A21VBS (+ Type)
E50A21VBR (- Type)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Average Forward Current
Peak 1 Cycle Surge Current
IF(AV)
IFSM
Non-Repetitive Peak
Reverse Surge Current (10mS)
IRSM
Transient Peak Reverse Voltage
Peak Reverse Voltage
Junction Temperature
Storage Temperature Range
VRSM
VRM
Tj
Tstg
RATING
50
380 (60Hz)
55
19
16
-40 215
-40 215
UNIT
A
A
A
V
V
E50A21VBS, E50A21VBR
STACK SILICON DIFFUSED DIODE
A
K
H
EI
JD
DIM
A
B
C
D
E
F
G
H
I
J
K
MILLIMETERS
Φ11.5 MAX
Φ12.75+0.09-0.00
Φ1.3+_ 0.04
4.2+_ 0.2
8.0+_ 0.2
TYP 0.5
Φ10.0+_ 0.2
0.4+_ 0.1x45
8.5 MAX
0.2+0.1
28.35+_ 0.5
F
G
B
B-PF
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Forward Voltage
Zener Voltage
Reverse Current
Transient Thermal Resistance
Breakdown Voltage
VF
VZ
IR
VF
Vbr
Temperature Coefficient
Reverse Leakage Current Under
High Temperature
T
HIR
Temperature Resistance
Rth
TEST CONDITION
IFM=100A
IZ=10mA
VR=18V
IFM=100A, IM=100mA, Pw=100mS
Irsm=55A, Pw=10mS
IZ=10mA
Ta=150 , VR=18V
DC total junction to case
MIN.
-
19
-
-
-
-
-
-
TYP.
-
21
-
-
-
15.7
-
-
MAX.
1.05
23
0.3
60
32
-
UNIT
V
V
A
mV
V
mV/
100 A
0.6 /W
2002. 4. 16
Revision No : 5
1/1




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E50A21VBS diode

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