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PDF BAV99 Data sheet ( Hoja de datos )
| Número de pieza | BAV99 | |
| Descripción | SC-70/SOT-323 Dual Series Switching Diode | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BAV99 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BAV99WT1/D
SC-70/SOT-323 Dual Series
Switching Diode
The BAV99WT1 is a smaller package, equivalent to the BAV99LT1.
Suggested Applications
• ESD Protection
• Polarity Reversal Protection
• Data Line Protection
• Inductive Load Protection
• Steering Logic
MAXIMUM RATINGS (EACH DIODE)
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
Repetitive Peak Reverse Voltage
Average Rectified Forward Current(1)
(averaged over any 20 ms period)
Repetitive Peak Forward Current
Non–Repetitive Peak Forward Current
t = 1.0 ms
t = 1.0 ms
t = 1.0 S
Symbol
VR
IF
IFM(surge)
VRRM
IF(AV)
IFRM
IFSM
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
FR–5 Board,(1) TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
1. FR–5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
DEVICE MARKING
BAV99WT1 = A7
BAV99RWT1 = F7
Value
70
215
500
70
715
450
2.0
1.0
0.5
Unit
Vdc
mAdc
mAdc
V
mA
mA
A
Symbol
PD
RqJA
PD
RqJA
TJ, Tstg
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
BAV99WT1
BAV99RWT1
Motorola Preferred Devices
3
ANODE
1
1
2
CATHODE
2
3
CATHODE/ANODE
BAV99WT1
CASE 419–02, STYLE 9
SC–70/SOT–323
CATHODE
1
ANODE
2
3
CATHODE/ANODE
BAV99RWT1
CASE 419–02, STYLE 10
SC–70/SOT–323
Max
200
1.6
625
300
2.4
417
– 65 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
©MMotootorroollaa, SInmc. 1a9ll9–6Signal Transistors, FETs and Diodes Device Data
1
1 page  
PACKAGE DIMENSIONS
BAV99WT1 BAV99RWT1
A
L
3
S
1
B
2
VD
G
0.05 (0.002)
H
C RN
J
K
CASE 419–02
ISSUE H
SC–70/SOT–323
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES
DIM MIN MAX
A 0.071 0.087
B 0.045 0.053
C 0.035 0.049
D 0.012 0.016
G 0.047 0.055
H 0.000 0.004
J 0.004 0.010
K 0.017 REF
L 0.026 BSC
N 0.028 REF
R 0.031 0.039
S 0.079 0.087
V 0.012 0.016
MILLIMETERS
MIN MAX
1.80 2.20
1.15 1.35
0.90 1.25
0.30 0.40
1.20 1.40
0.00 0.10
0.10 0.25
0.425 REF
0.650 BSC
0.700 REF
0.80 1.00
2.00 2.20
0.30 0.40
STYLE 9:
PIN 1. ANODE
2. CATHODE
3. CATHODE–ANODE
STYLE 10:
PIN 1. CATHODE
2. ANODE
3. ANODE–CATHODE
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet BAV99.PDF ] | |
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