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NXP Semiconductors |
DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D088
BAV74
High-speed double diode
Product data sheet
Supersedes data of 1999 May 11
2004 Jan 14
NXP Semiconductors
High-speed double diode
Product data sheet
BAV74
FEATURES
• Small plastic SMD package
• High switching speed: max. 4 ns
• Continuous reverse voltage: max. 50 V
• Repetitive peak reverse voltage: max. 60 V
• Repetitive peak forward current: max. 450 mA.
PINNING
PIN
1
2
3
DESCRIPTION
anode (a1)
anode (a2)
cathode
APPLICATIONS
• High-speed switching in thick and thin-film circuits. lumns 2
1
DESCRIPTION
The BAV74 consists of two high-speed switching diodes
with common cathodes, fabricated in planar technology,
and encapsulated in a small SOT23 plastic SMD package.
MARKING
Top view
3
21
3
MAM108
TYPE NUMBER
BAV74
MARKING CODE(1)
JA*
Fig.1 Simplified outline (SOT23) and symbol.
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W: Made in China.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN. MAX. UNIT
Per diode
VRRM
repetitive peak reverse
voltage
−
VR continuous reverse voltage
IF continuous forward current single diode loaded; note 1; see Fig.2
double diode loaded; note 1; see Fig.2
−
−
−
IFRM
repetitive peak forward current
−
IFSM non-repetitive peak forward square wave; Tj = 25 °C prior to surge; see Fig.4
current
t = 1 µs
−
t = 1 ms
−
t=1s
−
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Tamb = 25 °C; note 1
−
−65
−
60 V
50 V
215 mA
125 mA
450 mA
4
1
0.5
250
+150
150
A
A
A
mW
°C
°C
Note
1. Device mounted on an FR4 printed-circuit board.
2004 Jan 14
2
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