파트넘버.co.kr BAV70WT1 데이터시트 PDF


BAV70WT1 반도체 회로 부품 판매점

Dual Switching Diodes



Leshan Radio Company 로고
Leshan Radio Company
BAV70WT1 데이터시트, 핀배열, 회로
www.DataSheet4U.com
LESHAN RADIO COMPANY, LTD.
Dual Switching Diodes
DEVICE MARKING
BAV70WT1 = A4
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Reverse Voltage
Forward Current
Peak Forward Surge Current
THERMAL CHARACTERISTICS
VR
IF
IFM(surge)
Characteristic
Total Device Dissipation FR–5 Board(1)
TA = 25°C
Derate above 25°C
Symbol
PD
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate(2) TA = 25°C
Derate above 25°C
RθJA
PD
Thermal Resistance, Junction to Ambient RθJA
Junction and Storage Temperature
TJ, Tstg
Max
70
200
500
Max
200
1.6
0.625
300
2.4
417
–55 to +150
Unit
Vdc
mAdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I(BR) = 100 µAdc)
Reverse Voltage Leakage Current
V(BR)
(VR = 70 Vdc)
(VR = 50 Vdc)
Diode Capacitance
(VR = 0, f = 1.0 MHz)
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
Reverse Recovery Time
(IF= IR=10 mAdc, RL= 100, IR(REC)= 1.0 mAdc) (Figure 1)
Forward Recovery Voltage
(IF = 10 mAdc, tr = 20 ns) (Figure 2)
1. FR–5 = 1.0 × 0.75 × 0.062 in.
IR1
IR2
CD
VF
trr
VRF
2. Alumina = 0.4 × 0.3 × 0.024 in. 99.5% alumina.
3.For each individual diode while the seeond diode is unbiased.
Min
70
BAV70WT1
3
1
2
CASE 419–04, STYLE 5
SOT–323 (SC–70)
ANODE
1
ANODE
2
3
CATHODE
Max
5.0
100
1.5
715
855
1000
1250
6.0
1.75
Unit
Vdc
µAdc
nAdc
pF
mVdc
ns
V
BAV70WT1–1/3


BAV70WT1 데이터시트, 핀배열, 회로
RS = 50
LESHAN RADIO COMPANY, LTD.
BAV70WT1
BAV70
IF
SAMPLING
OSCILLOSCOPE
RL = 50
tr tp
10%
I
+IF
90%
VR
INPUT PULSE
Figure 1. Recovery Time Equivalent Test Circuit
1 K
450
trr OUTPUT PULSE
10%ĂOFĂ
VR
100ĂW
RS = 50
BAV70
SAMPLING
OSCILLOSCOPE
RL = 50
I
90%
10%
tr tp
INPUT PULSE
V
t
Figure 2.
VFR
OUTPUT PULSE
t
BAV70WT1–2/3




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BAV70WT1 diode

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