파트넘버.co.kr BAV70WT1 데이터시트 PDF


BAV70WT1 반도체 회로 부품 판매점

Dual Switching Diode



ON Semiconductor 로고
ON Semiconductor
BAV70WT1 데이터시트, 핀배열, 회로
www.DataSheet4U.com
BAV70WT1
Preferred Device
Dual Switching Diode
Common Cathode
Features
Pb−Free Package is Available
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol Max Unit
Reverse Voltage
VR 70 V
Forward Current
IF 200 mA
Peak Forward Surge Current
IFM(surge) 500
mA
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to
stresses above the Recommended Operating Conditions may affect device
reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Total Device Dissipation FR− 5 Board
(Note 1)
TA = 25°C
Derate above 25°C
PD 200 mW
1.6 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
625 °C/W
Total Device Dissipation
PD 300 mW
Alumina Substrate (Note 2) TA = 25°C
Derate above 25°C
2.4 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
417 °C/W
Junction and Storage Temperature
TJ, Tstg
−55 to
+150
°C
1. FR−5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
http://onsemi.com
3
CATHODE
ANODE
1
2
ANODE
MARKING
DIAGRAM
3
SOT−323
CASE 419
1
2
STYLE 5
3
A4 MG
G
12
A4 = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
BAV70WT1
BAV70WT1G
SOT−323
SOT−323
(Pb−Free)
3000/Tape & Reel
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2007
January, 2007 − Rev. 4
1
Publication Order Number:
BAV70WT1/D


BAV70WT1 데이터시트, 핀배열, 회로
BAV70WT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
(I(BR) = 100 mA)
Reverse Voltage Leakage Current (Note 3)
(VR = 70 V)
(VR = 50 V)
Forward Voltage
(IF = 1.0 mA)
(IF = 10 mA)
(IF = 50 mA)
(IF = 150 mA)
Diode Capacitance
(VR = 0 V, f = 1.0 MHz)
Reverse Recovery Time
(IF = IR = 10 mA, RL = 100 W, IR(REC) = 1.0 mA) (Figure 1)
Forward Recovery Voltage
(IF = 10 mA, tr = 20 ns) (Figure 2)
3. For each individual diode while the second diode is unbiased.
Symbol
V(BR)
IR
VF
CD
trr
VRF
Min
70
Max
5.0
100
715
855
1000
1250
1.5
6.0
1.75
Unit
V
mA
nA
mV
pF
ns
V
http://onsemi.com
2




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BAV70WT1 diode

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