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Infineon Technologies AG |
Silicon Switching Diode
• For high-speed switching applications
• Common cathode configuration
• BAV70S / U: For orientation in reel see
package information below
• Pb-free (RoHS compliant) package1)
• Qualified according AEC Q101
BAV70...
BAV70
BAV70W
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BAV70S
BAV70U
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Type
BAV70
BAV70S
BAV70U
BAV70W
Package
SOT23
SOT363
SC74
SOT323
Configuration
common cathode
double common cathode
double common cathode
common cathode
1Pb-containing package may be available upon special request
Marking
A4s
A4s
A4s
A4s
1 2007-09-19
BAV70...
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
Peak reverse voltage
Forward current
Non-repetitive peak surge forward current
t = 1 µs
VR
VRM
IF
IFSM
t = 1 ms
t = 1 s single
t = 1 s double
Value
80
85
200
4.5
1
0.5
0.75
Total power dissipation
BAV70, TS ≤ 33°C
BAV70S, TS ≤ 85°C
BAV70U, TS ≤ 90°C
BAV70W, TS ≤ 103°C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point1)
BAV70
BAV70S
BAV70U
BAV70W
Ptot
Tj
Tstg
Symbol
RthJS
250
250
250
250
150
-65 ... 150
Value
≤ 460
≤ 260
≤ 240
≤ 190
1For calculation of RthJA please refer to Application Note Thermal Resistance
Unit
V
mA
A
mW
°C
Unit
K/W
2 2007-09-19
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