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Infineon Technologies AG |
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Silicon Switching Diode
• For high-speed switching applications
• Common cathode configuration
BAV70...
BAV70
BAV70F
BAV70L3
BAV70T
BAV70W
3
D1 D2
12
BAV70S
BAV70U
65
4
D1 D2
D3 D4
12 3
Type
BAV70
BAV70F*
BAV70L3 **
BAV70S
BAV70T
BAV70U
BAV70W
* Preliminary Data
** Target Data
Package
SOT23
TSFP-3
TSLP-3-1
SOT363
SC75
SC74
SOT323
Configuration
common cathode
common cathode
common cathode, leadless
double common cathode
common cathode
double common cathode
common cathode
Marking
A4s
A4s
A4
A4s
A4s
A4s
A4s
1 Mar-10-2004
BAV70...
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
Peak reverse voltage
Forward current
Non-repetitive peak surge forward current
t = 1 µs
VR
VRM
IF
IFSM
t = 1 ms
t = 1 s single
t = 1 s double
Total power dissipation
BAV70, TS ≤ 33°C
BAV70F, TS ≤ tbd
BAV70L3, TS ≤ tbd
BAV70S, TS ≤ 85°C
BAV70T, TS ≤ 73°C
BAV70U, TS ≤ 90°C
BAV70W, TS ≤ 103°C
Ptot
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point1)
BAV70
BAV70F
BAV70L3
BAV70S
BAV70T
BAV70U
BAV70W
Tj
Tstg
Symbol
RthJS
Value
80
85
200
4.5
1
0.5
0.75
250
250
250
250
250
250
250
150
-65 ... 150
Value
≤ 460
≤ tbd
≤ tbd
≤ 260
≤ 310
≤ 240
≤ 190
1For calculation of RthJA please refer to Application Note Thermal Resistance
Unit
V
mA
A
mW
°C
Unit
K/W
2 Mar-10-2004
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