BAV20 반도체 회로 부품 판매점
High Voltage General Purpose Diode
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 Fairchild Semiconductor |
BAV19 / 20 / 21
DO-35
High Voltage General Purpose Diode
Sourced from Process 1J.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
W IV
IO
IF
if
if(surge)
Tstg
TJ
Working Inverse Voltage
Average Rectified Current
DC Forward Current
Recurrent Peak Forward Current
Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
Storage Temperature Range
Operating Junction Temperature
BAV19
BAV20
BAV21
100
150
200
200
500
600
1.0
4.0
-65 to +200
175
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJA Thermal Resistance, Junction to Ambient
Max
BAV19 / 20 / 21
500
3.33
300
Units
V
V
V
mA
mA
mA
A
A
°C
°C
Units
mW
mW /°C
°C/W
2000 Fairchild Semiconductor International
BAV19/20/21, Rev. A
High Voltage General Purpose Diode
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
BV
IR
VF
CO
TRR
Parameter
Breakdown Voltage
Reverse Current
Forward Voltage
Diode Capacitance
Reverse Recovery Time
BAV19
BAV20
BAV21
BAV19
BAV20
BAV21
Test Conditions
IR = 100 µA
IR = 100 µA
IR = 100 µA
VR = 100 V
VR = 100 V, TA = 150°C
VR = 150 V
VR = 150 V, TA = 150°C
VR = 200 V
VR = 200 V, TA = 150°C
IF = 100 mA
IF = 200 mA
VR = 0, f = 1.0 MHz
IF = IR = 30 mA, IRR = 3.0 mA,
RL = 100Ω
Min
120
200
250
Max
100
100
100
100
100
100
1.0
1.25
5.0
50
Units
V
V
V
nA
µA
nA
µA
nA
µA
V
V
pF
nS
Typical Characteristics
REVERSE VOLTAGE vs REVERSE CURRENT
BV - 1.0 to 100 uA
325
Ta= 25°C
300
275
3
5 10 20 30 50
IR - REVERSE CURRENT (uA)
100
REVERSE CURRENT vs REVERSE VOLTAGE
IR - 55 to 205 V
50
Ta= 25°C
40
30
20
10
0
55 75 95 115 135 155 175 195
VR - REVERSE VOLTAGE (V)
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten (10) Degree C increase in Temperature
REVERSE CURRENT vs REVERSE VOLTAGE
IR - 180 to 255 V
100
90 Ta= 25°C
80
70
60
50
40
30
20
180
200 220 240
VR - REVERSE VOLTAGE (V)
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten Degree C increase in Temperature
255
FORWARD VOLTAGE vs FORWARD CURRENT
VF - 1.0 to 100 uA
Ta= 25°C
450
400
350
300
250
1
23 5
10 20 30 50
IF - FORWARD CURRENT (uA)
100
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BAV20 diode
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