파트넘버.co.kr BAV20 데이터시트 PDF


BAV20 반도체 회로 부품 판매점

FAST SWITCHING DIODE



Diodes Incorporated 로고
Diodes Incorporated
BAV20 데이터시트, 핀배열, 회로
BAV20 / BAV21
FAST SWITCHING DIODE
Features
· Glass Package for High Reliability
· Planar Die Construction
· Low Reverse Leakage Current
· Also available in Surface Mount Package
(BAV20W and BAV21W)
Mechanical Data
· Case: DO-35, Glass
· Leads: Solderable per MlL-STD-202,
Method 208
· Marking: Cathode Band and Type Number
· Weight: 0.13 grams (approx.)
Maximum Ratings @ TA = 25°C unless otherwise specified
Characteristic
Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Average Rectified Output Current (Note 1)
Forward Surge Current
@ t = 1.0s
Repetitive Peak Forward Current (Note 1)
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Symbol
VRRM
VRWM
VR
VR(RMS)
IFM
I0
IFSM
IFRM
Pd
RqJA
Tj, TSTG
ABA
D
DO-35
Dim Min Max
A 25.40 —
B — 4.00
C — 0.60
D — 2.00
All Dimensions in mm
BAV20
200
BAV21
250
150 200
106 141
250
200
1.0
625
500
300
-65 to +175
C
Unit
V
V
V
mA
mA
A
mA
mW
K/W
°C
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Maximum Forward Voltage
Maximum Peak Reverse Current
Dynamic Forward Resistance
Junction Capacitance
Reverse Recovery Time
Symbol Min Typ Max Unit
Test Condition
VFM — — 1.0 V IF = 100mA
BAV20
BAV20
BAV21
BAV21
IR
100 nA VR = 150V
15
100
mA VR = 150V, Tj = 100°C
nA VR = 200V
15 mA VR = 200V, Tj = 100°C
rf
— 5.0 —
W IF = 10mA
Cj — 1.5 — pF VR = 0, f = 1.0MHz
trr
50
ns
IF = IR = 30mA to IR = 3.0mA;
RL = 100 W
Notes: 1. Valid provided that leads are kept at ambient temperature at a distance of 8.0mm.
DS22006 Rev. H-2
1 of 2
BAV20 / BAV21


BAV20 데이터시트, 핀배열, 회로
1000
100
10
Tj = 100 °C
Tj = 25 °C
0.3
0.2
(See Note 1)
DC Current IF
1.0 Current (rectif.) IO
0.1
0.1
0.01
0
0.2 0.4 0.6 0.8 1.0
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 1 Typical Forward Characteristics
500
400
(See Note 1)
300
200
0
0 30 60 90 120 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 2 Forward Current Derating
1000
100
10
100
0
0
100
TA, AMBIENT TEMPERATURE (ºC)
Fig. 3. Power Dissipation Derating
200
100
10
1
1 10 100
IF, FORWARD CURRENT (mA)
Fig. 5 Dynamic Forward Resistance vs Forward Current
DS22006 Rev. H-2
2 of 2
1
0
0
100
Reverse Voltage
BAV20 VR = 150V
BAV21 VR = 200V
200
TJ, JUNCTION TEMPERATURE (°C)
Fig. 4 Relative Reverse Current vs Junction Temperature
1.8
Tj = 25 °C
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.1 1.0 10 100
VR, REVERSE VOLTAGE (V)
Fig. 6 Typical Junction Capacitance vs Reverse Voltage
BAV20 / BAV21




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BAV20 diode

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