BAV19WS 반도체 회로 부품 판매점
Surface mount Small Signal Diodes
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 Diotec Semiconductor |
BAV19WS...BAV21WS
BAV19WS...BAV21WS
Surface Mount Small Signal Diodes
Kleinsignal-Dioden für die Oberflächenmontage
Version 2011-09-27
Power dissipation – Verlustleistung
1.7±0.1
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
Plastic case – Kunststoffgehäuse
Type
Code
2.5±0.2
Dimensions - Maße [mm]
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
200 mW
120...250 V
~ SOD-323
0.005 g
Maximum ratings (TA = 25° C)
Power dissipation − Verlustleistung
Max. average forward current – Dauergrenzstrom (dc)
Repetitive peak forward current – Periodischer Spitzenstrom
Non repetitive peak forward surge current
Stoßstrom-Grenzwert
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
tp ≤ 1 s
tp ≤ 1 µs
BAV19WS
BAV20WS
BAV21WS
Continuous reverse voltage
Sperrspannung
BAV19WS
BAV20WS
BAV21WS
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Grenzwerte (TA = 25° C)
BAV19WS, BAV20WS, BAV21WS
Ptot
IFAV
IFRM
IFSM
IFSM
VRRM
VRRM
VRRM
VR
VR
VR
Tj
200 mW 1)
200 mA 1)
625 mA 1)
0.5 A
2.5 A
120 V
200 V
250 V
100 V
150 V
200 V
+150° C
TS - 55…+150° C
1 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
© Diotec Semiconductor AG
http://www.diotec.com
1
BAV19WS...BAV21WS
Characteristics (Tj = 25° C)
Forward voltage 1)
Durchlass-Spannung
IF = 100 mA
IF = 200 mA
Leakage current 1)
Sperrstrom
Tj = 25° C
BAV19WS
BAV20WS
BAV21WS
VR = 100 V
VR = 150 V
VR = 200 V
Max. junction capacitance – Max. Sperrschichtkapazität
VR = 0 V, f = 1 MHz
Reverse recovery time – Sperrverzug
IF = 30 mA über/ through IR = 30 mA bis / to IR = 1 mA
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Marking – Stempelung
BAV19WS
BAV20WS
BAV21WS
Kennwerte (Tj = 25° C)
VF < 1 V
VF < 1.25 V
IR < 100 nA
CT < 5 pF
trr < 50 ns
RthA < 625 K/W 2
WO
120
[%]
100
80
60
40
20
Ptot
0
0 TA 50 100 150 [°C]
Power dissipation versus ambient temperature 1)
Verlustleistung in Abh. von d. Umgebungstemp.1)
1
[A]
10-1
10-2
Tj = 125°C
10-3
Tj = 25°C
IF
10-4
0
VF 0.4 0.6 0.8 1.0 [V]
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
1.4
1 Tested with pulses tp = 300 µs, duty cycles ≤ 2 %
gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2 %
2 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2 http://www.diotec.com
© Diotec Semiconductor AG
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PDF 파일 내의 페이지 : 총 2 페이지
제조업체: Diotec Semiconductor
( diotec )
BAV19WS diode
데이터시트 다운로드 :
[ BAV19WS.PDF ]
[ BAV19WS 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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