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BAV170 반도체 회로 부품 판매점

Low-leakage double diode



NXP Semiconductors 로고
NXP Semiconductors
BAV170 데이터시트, 핀배열, 회로
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BAV170
Low-leakage double diode
Product data sheet
Supersedes data of 1999 May 11
2003 Mar 25


BAV170 데이터시트, 핀배열, 회로
NXP Semiconductors
Low-leakage double diode
Product data sheet
BAV170
FEATURES
Plastic SMD package
Low leakage current: typ. 3 pA
Switching time: typ. 0.8 µs
Continuous reverse voltage:
max. 75 V
Repetitive peak reverse voltage:
max. 85 V
Repetitive peak forward current:
max. 500 mA.
DESCRIPTION
Epitaxial, medium-speed switching,
double diode in a small SOT23 plastic
SMD package. The diodes are in
common cathode configuration.
PINNING
PIN
1
2
3
DESCRIPTION
anode
anode
common cathode
APPLICATION
Low-leakage current applications in
surface mounted circuits.
MARKING
TYPE NUMBER
BAV170
MARKING
CODE(1)
JX*
Note
1. = p : Made in Hong Kong.
= t : Made in Malaysia.
= W : Made in China.
handbook, 4 columns
2
1
Top view
3
21
3
MAM108
Fig.1 Simplified outline (SOT23) and symbol.
2003 Mar 25
2




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