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PDF BAV101 Data sheet ( Hoja de datos )

Número de pieza BAV101
Descripción Small Signal Diodes
Fabricantes General Semiconductor 
Logotipo General Semiconductor Logotipo

BAV101 datasheet


1. - 120V, 300mW, Switching Diode






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No Preview Available ! BAV101 Hoja de datos, Descripción, Manual

BAV100 THRU BAV103
Small Signal Diodes
MiniMELF
Cathode Mark
.142 (3.6)
.134 (3.4)
.019 (0.48)
.011 (0.28)
FEATURES
Silicon Epitaxial Planar Diodes
For general purpose
These diodes are also available in other
case styles including: the DO-35 case with
the type designations BAV19 to BAV21, the SOD-123
case with the type designations BAV19W to BAV21W,
and the SOT-23 case with the type designation
BAS19 - BAS21.
Dimensions in inches and (millimeters)
MECHANICAL DATA
Case: MiniMELF Glass Case (SOD-80)
Weight: approx. 0.05 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Reverse Voltage
BAV100
BAV101
BAV102
BAV103
VR
VR
VR
VR
Forward DC Current at Tamb = 25 °C
IF
Rectified Current (Average)
Half Wave Rectification with Resist. Load
at Tamb = 25 °C and f 50 Hz
I0
Repetitive Peak Forward Current
at f 50 Hz, Θ = 180 °C, Tamb = 25 °C
Surge Forward Current at t < 1 s, Tj = 25 °C
IFRM
IFSM
Power Dissipation at Tamb = 25 °C
Ptot
Junction Temperature
Tj
Storage Temperature Range
TS
1) Valid provided that electrodes are kept at ambient temperature.
Value
60
120
200
250
2501)
2001)
6251)
1
4001)
175
–65 to +175
Unit
V
V
V
V
mA
mA
mA
A
mW
°C
°C
4/98

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