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NXP Semiconductors |
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D744
BAT960
Schottky barrier diode
Product data sheet
Supersedes data of 2002 Jun 24
2003 May 01
NXP Semiconductors
Schottky barrier diode
Product data sheet
BAT960
FEATURES
• High current capability
• Very low forward voltage
• Ultra small plastic SMD package
• Flat leads: excellent coplanarity and improved thermal
behaviour.
APPLICATIONS
• Ultra high-speed switching
• rectification
• DC/DC conversion
• Switch mode power supply
• Inverse polarity protection.
PINNING
PIN
1 cathode
2 cathode
3 anode
4 anode
5 cathode
6 cathode
DESCRIPTION
handbook, halfpag6e 5 4
GENERAL DESCRIPTION
Planar Schottky barrier diode with an integrated guard ring
for stress protection in a SOT666 ultra small SMD plastic
package.
123
1, 2
5, 6
3, 4
MHC310
Marking code: B9.
Fig.1 Simplified outline (SOT666) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
VR continuous reverse voltage
IF continuous forward current
IFSM non-repetitive peak forward current
Tstg
Tj
Tamb
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
t = 8.3 ms half sinewave;
JEDEC method; note 1
Note
1. Only valid, if pins 3 and 4 are connected in parallel.
MIN.
−
−
−
MAX.
23
1
8
UNIT
V
A
A
−65
+150
°C
− 125 °C
−65
+125
°C
2003 May 01
2
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