BAT86S 반도체 회로 부품 판매점
Small Signal Schottky Diode
|
|
 Vishay Telefunken |
www.vishay.com
BAT86S
Vishay Semiconductors
Small Signal Schottky Diode
MECHANICAL DATA
Case: DO-35
Weight: approx. 125 mg
Cathode band color: black
Packaging codes/options:
TR/10K per 13" reel (52 mm tape), 50K/box
TAP/10K per ammopack (52 mm tape), 50K/box
FEATURES
• Integrated protection ring against static
discharge
• Very low forward voltage
• AEC-Q101 qualified
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Applications where a very low forward voltage is required
PARTS TABLE
PART
BAT86S
ORDERING CODE
BAT86S-TR or BAT86S-TAP
INTERNAL CONSTRUCTION
Single diode
TYPE MARKING
BAT86S
REMARKS
Tape and reel/ammopack
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Reverse voltage
Peak forward surge current
Repetitive peak forward current
tp 10 ms
tp 1 s
VR
IFSM
IFRM
Forward continuous current
Average forward current
PCB mounting, I = 4 mm;
VRWM = 25 V, Tamb = 50 °C
IF
IFAV
VALUE
50
5
500
200
200
UNIT
V
A
mA
mA
mA
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
I = 4 mm, TL = constant
RthJA
Tj
Tstg
VALUE
320
125
- 65 to + 150
UNIT
K/W
°C
°C
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL MIN.
Forward voltage
Reserve current
Diode capacitance
IF = 0.1 mA
IF = 1 mA
IF = 10 mA
IF = 30 mA
IF = 100 mA
VR = 40 V
VR = 1 V, f = 1 MHz
VF
VF
VF
VF
VF
IR
CD
TYP.
MAX.
300
380
450
600
900
5
8
UNIT
mV
mV
mV
mV
mV
μA
pF
Rev. 1.9, 06-May-13
1 Document Number: 85514
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
BAT86S
Vishay Semiconductors
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
500
450 VR = 50 V
400
350
300
250 PR - Limit
200 at 100 % VR
150
100 RthJA = 540 K/W
50
PR - Limit
at 80 % VR
0
25 50 75 100 125 150
15827
Tj - Junction Temperature (°C)
Fig. 1 - Max. Reverse Power Dissipation vs.
Junction Temperature
1000
100
10
Tj = 125 °C
Tj = 25 °C
1
0.1
0
0.5 1.0 1.5
15829
VF - Forward Voltage (V)
Fig. 3 - Forward Current vs. Forward Voltage
10000
1000
VR = V RRM
100
10
1
25 50 75 100 125 150
15828
Tj - Junction Temperature (°C)
Fig. 2 - Reverse Current vs. Junction Temperature
PACKAGE DIMENSIONS in millimeters (inches): DO-35
10
9
f = 1 MHz
8
7
6
5
4
3
2
1
0
0.1
1
10 100
15830
VR - Reverse Voltage (V)
Fig. 4 - Diode Capacitance vs. Reverse Voltage
26 min. [1.024]
Rev. 6 - Date: 19. December 2011
Document no.: SB-V-3906.04-031(4)
94 9366
3.9 max. [0.154]
3.1 min. [0.120]
26 min. [1.024]
Rev. 1.9, 06-May-13
2 Document Number: 85514
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
|
PDF 파일 내의 페이지 : 총 3 페이지
제조업체: Vishay Telefunken
( vishay )
BAT86S diode
데이터시트 다운로드 :
[ BAT86S.PDF ]
[ BAT86S 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
BAT86
Schottky barrier diode - NXP Semiconductors
BAT86
Schottky Diodes - General Semiconductor
BAT86
SMALL SIGNAL SCHOTTKY DIODES - Micro Commercial Components
BAT86S
Small Signal Schottky Diode - Vishay Telefunken