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NXP Semiconductors |
DISCRETE SEMICONDUCTORS
DATA SHEET
k, halfpage
M3D050
BAT81; BAT82; BAT83
Schottky barrier diodes
Product specification
Supersedes data of July 1991
1996 Mar 20
Philips Semiconductors
Schottky barrier diodes
Product specification
BAT81; BAT82; BAT83
FEATURES
• Low forward voltage
• High breakdown voltage
• Guard ring protected
• Hermetically-sealed leaded glass
package
• Low diode capacitance.
APPLICATIONS
• Ultra high-speed switching
• Voltage clamping
• Protection circuits
• Blocking diodes.
DESCRIPTION
Planar Schottky barrier diode with an integrated protection ring against static
discharges, encapsulated in a hermetically-sealed subminiature SOD68
(DO-34) package. The diode is suitable for mounting on a 2 E (5.08 mm) pitch.
handbook, halfpakge
a
MAM193
Fig.1 Simplified outline (SOD68; DO-34), pin configuration and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VR continuous reverse voltage
BAT81
BAT82
BAT83
IF continuous forward current
IFRM repetitive peak forward current
tp ≤ 1 s; δ ≤ 0.5
IFSM non-repetitive peak forward current tp ≤ 10 ms
Tstg storage temperature
Tj junction temperature
MIN. MAX. UNIT
− 40 V
− 50 V
− 60 V
− 30 mA
− 150 mA
− 500 mA
−65 150 °C
− 125 °C
1996 Mar 20
2
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