BAT54W 반도체 회로 부품 판매점
SMALL SIGNAL SCHOTTKY DIODE
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 STMicroelectronics |
® BAT54J / W / AW / CW / SW
SMALL SIGNAL SCHOTTKY DIODE
FEATURES AND BENEFITS
VERY SMALL CONDUCTION LOSSES
NEGLIGIBLE SWITCHING LOSSES
LOW FORWARD VOLTAGE DROP
SURFACE MOUNT DEVICE
DESCRIPTION
Schottky barrier diodes encapsulated either in
SOT-323 or SOD-323 small SMD packages.
Single and double diodes with different pining are
available.
NC
KK
NC
A
A
BAT54W
K2
A
K2 A
K1
K1
BAT54AW
A2
K
A2 K
A1
A1
BAT54CW
K2
A2
K1 A2
K2 K1
A1 A1
BAT54SW
SOT-323
A 86 K
BAT54J
SOD-323
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
VRRM Repetitive peak reverse voltage
30
IF Continuous forward current
0.3
IFSM Surge non repetitive forward current
tp=10ms sinusoidal
1
Ptot Power dissipation (note 1)
Tamb = 25°C
SOD-323
SOT-323
230
Tstg Maximum storage temperature range
- 65 to +150
Tj Maximum operating junction temperature *
150
TL Maximum temperaturefor soldering during 10s
260
Note 1: for double diodes, Ptot is the total dissipation of both diodes
*
:
dPtot
dTj
<
1
Rth(j−a)
thermal runaway condition for a diode on its own heatsink
June 1999 - Ed: 2A
Unit
V
A
A
mW
°C
°C
°C
1/5
BAT54J / W / AW / CW / SW
THERMAL RESISTANCE
Symbol
Parameters
Rth (j-a) Junction to ambient (*)
SOD-323
SOT-323
(*) Mounted on epoxy board, with recommended pad layout.
Value
550
Unit
°C/W
°C/W
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameters
Tests conditions
VF * Forward voltage drop
Tj = 25°C
IF = 0.1 mA
IF = 1 mA
IF = 10 mA
IF = 30 mA
IF = 100 mA
IR ** Reverse leakage current Tj = 25°C
VR = 30 V
Tj = 100°C
Pulse test : * tp = 380 µs, δ < 2%
** tp = 5 ms, δ < 2%
DYNAMIC CHARACTERISTICS (Tj = 25 °C)
Min. Typ. Max.
240
320
400
500
900
1
100
Unit
mV
µA
Symbol Parameters
C Junction
capacitance
trr Reverse recovery
time
Tests conditions
Tj = 25°C VR = 1 V F = 1 MHz
Min.
Typ. Max. Unit
10 pF
IF = 10 mA IR = 10 mA Tj = 25°C
Irr = 1 mA RL = 100 Ω
5 ns
Fig. 1-1: Forward voltage drop versus forward
current (typical values, low level).
Fig. 1-2: Forward voltage drop versus forward
current (typical values, high level).
IFM(A)
2.00E-2
1.80E-2
1.60E-2
1.40E-2
1.20E-2
1.00E-2
Tj=100°C
Tj=50°C
Tj=25°C
8.00E-3
6.00E-3
4.00E-3
2.00E-3
VFM(V)
0.00E+0
0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50
IFM(A)
5E-1
1E-1
Tj=100°C
1E-2
Tj=50°C
Tj=25°C
VFM(V)
1E-3
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
2/5
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BAT54W diode
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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